Probing impact on magnetic behavior of cobalt layer grown on thick MoS2 layer

Zainab Hussain; Shashikant P. Patole; Shoyebmohamad F. Shaikh; P. E. Lokhande; Habib M. Pathan

doi:10.1038/s41598-024-54316-1

Probing impact on magnetic behavior of cobalt layer grown on thick MoS2 layer

Zainab Hussain, Shashikant P. Patole, Shoyebmohamad F. Shaikh, P. E. Lokhande, Habib M. Pathan

Research output: Contribution to journal › Article › peer-review

Abstract

Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS₂). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS₂ on the magnetic properties of the 10 nm Co layer. A comparative study on Co/MoS₂ and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS₂. The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS₂ as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS₂ layer. Furthermore, our results will help in developing next-generation spintronic devices.

Original language	British English
Article number	5064
Journal	Scientific Reports
Volume	14
Issue number	1
DOIs	https://doi.org/10.1038/s41598-024-54316-1
State	Published - Dec 2024

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title = "Probing impact on magnetic behavior of cobalt layer grown on thick MoS2 layer",

abstract = "Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS2). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS2 on the magnetic properties of the 10 nm Co layer. A comparative study on Co/MoS2 and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS2. The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS2 as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS2 layer. Furthermore, our results will help in developing next-generation spintronic devices.",

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doi = "10.1038/s41598-024-54316-1",

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AU - Hussain, Zainab

AU - Patole, Shashikant P.

AU - Shaikh, Shoyebmohamad F.

AU - Lokhande, P. E.

AU - Pathan, Habib M.

N1 - Publisher Copyright: © The Author(s) 2024.

PY - 2024/12

Y1 - 2024/12

N2 - Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS2). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS2 on the magnetic properties of the 10 nm Co layer. A comparative study on Co/MoS2 and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS2. The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS2 as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS2 layer. Furthermore, our results will help in developing next-generation spintronic devices.

AB - Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS2). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS2 on the magnetic properties of the 10 nm Co layer. A comparative study on Co/MoS2 and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS2. The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS2 as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS2 layer. Furthermore, our results will help in developing next-generation spintronic devices.

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Probing impact on magnetic behavior of cobalt layer grown on thick MoS2 layer

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