Power and Yield for SRAM Memory

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

As noted in the previous chapter, supply voltage, cell ratio, and threshold voltage of the devices are the factors that determine whether a cell is robust and stable. In addition to these factors, controlling variability through process technology further reduces the device parameter shift.

Original languageBritish English
Title of host publicationAnalog Circuits and Signal Processing
PublisherSpringer
Pages53-59
Number of pages7
DOIs
StatePublished - 2014

Publication series

NameAnalog Circuits and Signal Processing
Volume116
ISSN (Print)1872-082X
ISSN (Electronic)2197-1854

Keywords

  • Memory Supplies
  • Process Technology Node
  • SRAM Cell
  • Voltage Islands
  • Wordline

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