Physics model of memristor devices with varying active materials

Heba Abunahla, Nadeen El Nachar, Dirar Homouz, Baker Mohammad, Maguy Abi Jaoude

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper presents a physics-based model for memristors with different active layer materials. The model predicts the effect of changing the active material on the electrical characteristics of the devices. It captures the essential characteristics of the memristor such as coupling between ion mobility and electron current in addition to the nonlinear effects of electric fields. The parameters in the model depend on material (metal-oxide) properties that have impact on the device behavior. These properties are activation energy, escape attempt frequency, hopping parameter and relative permittivity. In this work, the effect of each parameter is highlighted and explained. In addition, the physics-based Matlab model is used to analyze the electrical characteristics of simulated memristor device using the following oxide materials; ZnO, TiO2 and Ta2O5. The simulation results of the model are validated with experimental data reported in the literature. The value of this contribution is to enable the selection of suitable oxide materials for the target memristor using correlated mathematical models.

Original languageBritish English
Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1590-1593
Number of pages4
ISBN (Electronic)9781479953400
DOIs
StatePublished - 29 Jul 2016
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: 22 May 201625 May 2016

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2016-July
ISSN (Print)0271-4310

Conference

Conference2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
Country/TerritoryCanada
CityMontreal
Period22/05/1625/05/16

Keywords

  • Memristor
  • operating voltage
  • oxide material
  • physics model
  • resistance

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