Physical properties and diffusion characteristics of CVD-grown TiSiN films

Dalaver Anjum, Katharine Dovidenko, Serge Oktyabrsky, Eric Eisenbraun, Alain E. Kaloyeros

Research output: Contribution to journalConference articlepeer-review


TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI4 + SiI4 + NH3 + H2 chemistry at substrate temperature, 370 °C, and SiI4 - to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 μω-cm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550 °C. Breakdown of this diffusion barrier occurred at 600 °C and was accompanied by the formation of Cu3Si protrusions at the TiSiN/Si interface.

Original languageBritish English
Pages (from-to)341-346
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2002
EventSurface Engineering 2001 - Fundamentals and Applications - Boston, MA, United States
Duration: 26 Nov 200229 Nov 2002


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