Photovoltaic effect of cubic GaN/GaAs(100)

D. G. Zhao; D. S. Jiang; Hui Yang; L. X. Zheng; D. P. Xu; J. B. Li; Q. M. Wang

doi:10.1063/1.125468

Photovoltaic effect of cubic GaN/GaAs(100)

D. G. Zhao, D. S. Jiang, Hui Yang, L. X. Zheng, D. P. Xu, J. B. Li, Q. M. Wang

Mechanical & Nuclear Engineering

Institute of Semiconductors Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He - Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 μm for two undoped n-type cubic GaN samples with background concentrations of 10¹⁴ and 10¹⁸ cm^-3 respectively.

Original language	British English
Pages (from-to)	3823-3825
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	24
DOIs	https://doi.org/10.1063/1.125468
State	Published - 13 Dec 1999

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@article{c97183bccca34516b652e25e5764446a,

title = "Photovoltaic effect of cubic GaN/GaAs(100)",

abstract = "We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He - Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 μm for two undoped n-type cubic GaN samples with background concentrations of 1014 and 1018 cm-3 respectively.",

author = "Zhao, {D. G.} and Jiang, {D. S.} and Hui Yang and Zheng, {L. X.} and Xu, {D. P.} and Li, {J. B.} and Wang, {Q. M.}",

year = "1999",

month = dec,

day = "13",

doi = "10.1063/1.125468",

language = "British English",

volume = "75",

pages = "3823--3825",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Photovoltaic effect of cubic GaN/GaAs(100)

AU - Zhao, D. G.

AU - Jiang, D. S.

AU - Yang, Hui

AU - Zheng, L. X.

AU - Xu, D. P.

AU - Li, J. B.

AU - Wang, Q. M.

PY - 1999/12/13

Y1 - 1999/12/13

N2 - We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He - Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 μm for two undoped n-type cubic GaN samples with background concentrations of 1014 and 1018 cm-3 respectively.

AB - We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He - Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 μm for two undoped n-type cubic GaN samples with background concentrations of 1014 and 1018 cm-3 respectively.

UR - http://www.scopus.com/inward/record.url?scp=0009568511&partnerID=8YFLogxK

U2 - 10.1063/1.125468

DO - 10.1063/1.125468

M3 - Article

AN - SCOPUS:0009568511

SN - 0003-6951

VL - 75

SP - 3823

EP - 3825

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Photovoltaic effect of cubic GaN/GaAs(100)

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