Performance of 500 μm thick silicon microstrip detectors after irradiation

W. Adam; E. Berdermann; P. Bergonzo; G. Bertuccio; F. Bogani; E. Borchi; A. Brambilla; M. Bruzzi; C. Colledani; J. Conway; P. D'Angelo; W. Dabrowski; P. Delpierre; A. Deneuville; W. Dulinski; B. Van Eijk; A. Fallou; F. Fizzotti; F. Foulon; M. Friedl; K. K. Gan; E. Gheeraert; G. Hallewell; S. Han; F. Hartjes; J. Hrubec; D. Husson; H. Kagan; D. Kania; J. Kaplon; R. Kass; T. Koeth; M. Krammer; A. Logiudice; R. Lu; L. Mac Lynne; C. Manfredotti; D. Meier; M. Mishina; L. Moroni; J. Noomen; A. Oh; L. S. Pan; M. Pernicka; A. Peitz; L. Perera; S. Pirollo; M. Procario; J. L. Riester; S. Roe; L. Rousseau; A. Rudge; J. Russ; S. Sala; M. Sampietro; S. Schnetzer; S. Sciortino; H. Stelzer; R. Stone; B. Suter; R. J. Tapper; R. Tesarek; W. Trischuk; D. Tromson; E. Vittone; A. M. Walsh; R. Wedenig; P. Weilhammer; M. Wetstein; C. White; W. Zeuner; M. Zoeller; R. Plano; S. V. Somalwar; G. B. Thomson

doi:10.1016/S0168-9002(01)01665-5

Performance of 500 μm thick silicon microstrip detectors after irradiation

W. Adam, E. Berdermann, P. Bergonzo, G. Bertuccio, F. Bogani, E. Borchi, A. Brambilla, M. Bruzzi, C. Colledani, J. Conway, P. D'Angelo, W. Dabrowski, P. Delpierre, A. Deneuville, W. Dulinski, B. Van Eijk, A. Fallou, F. Fizzotti, F. Foulon, M. FriedlK. K. Gan, E. Gheeraert, G. Hallewell, S. Han, F. Hartjes, J. Hrubec, D. Husson, H. Kagan, D. Kania, J. Kaplon, R. Kass, T. Koeth, M. Krammer, A. Logiudice, R. Lu, L. Mac Lynne, C. Manfredotti, D. Meier, M. Mishina, L. Moroni, J. Noomen, A. Oh, L. S. Pan, M. Pernicka, A. Peitz, L. Perera, S. Pirollo, M. Procario, J. L. Riester, S. Roe, L. Rousseau, A. Rudge, J. Russ, S. Sala, M. Sampietro, S. Schnetzer, S. Sciortino, H. Stelzer, R. Stone, B. Suter, R. J. Tapper, R. Tesarek, W. Trischuk, D. Tromson, E. Vittone, A. M. Walsh, R. Wedenig, P. Weilhammer, M. Wetstein, C. White, W. Zeuner, M. Zoeller, R. Plano, S. V. Somalwar, G. B. Thomson

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

This paper investigates the performance of 500 μm thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard 300 μm sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that 500 μm thick devices are a promising technology for very large tracking systems.

Original language	British English
Pages (from-to)	739-743
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	476
Issue number	3
DOIs	https://doi.org/10.1016/S0168-9002(01)01665-5
State	Published - 11 Jan 2002
Event	Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) - Firenze, Italy Duration: 28 Jun 2000 → 30 Jun 2000

Keywords

6-inch technology
Radiation damage
Silicon microstrip detectors

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10.1016/S0168-9002(01)01665-5

Cite this

Adam, W., Berdermann, E., Bergonzo, P., Bertuccio, G., Bogani, F., Borchi, E., Brambilla, A., Bruzzi, M., Colledani, C., Conway, J., D'Angelo, P., Dabrowski, W., Delpierre, P., Deneuville, A., Dulinski, W., Van Eijk, B., Fallou, A., Fizzotti, F., Foulon, F., ... Thomson, G. B. (2002). Performance of 500 μm thick silicon microstrip detectors after irradiation. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 476(3), 739-743. https://doi.org/10.1016/S0168-9002(01)01665-5

@article{dc154f903bb74ea78bd10261c0622e97,

title = "Performance of 500 μm thick silicon microstrip detectors after irradiation",

abstract = "This paper investigates the performance of 500 μm thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard 300 μm sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that 500 μm thick devices are a promising technology for very large tracking systems.",

keywords = "6-inch technology, Radiation damage, Silicon microstrip detectors",

author = "W. Adam and E. Berdermann and P. Bergonzo and G. Bertuccio and F. Bogani and E. Borchi and A. Brambilla and M. Bruzzi and C. Colledani and J. Conway and P. D'Angelo and W. Dabrowski and P. Delpierre and A. Deneuville and W. Dulinski and {Van Eijk}, B. and A. Fallou and F. Fizzotti and F. Foulon and M. Friedl and Gan, {K. K.} and E. Gheeraert and G. Hallewell and S. Han and F. Hartjes and J. Hrubec and D. Husson and H. Kagan and D. Kania and J. Kaplon and R. Kass and T. Koeth and M. Krammer and A. Logiudice and R. Lu and {Mac Lynne}, L. and C. Manfredotti and D. Meier and M. Mishina and L. Moroni and J. Noomen and A. Oh and Pan, {L. S.} and M. Pernicka and A. Peitz and L. Perera and S. Pirollo and M. Procario and Riester, {J. L.} and S. Roe and L. Rousseau and A. Rudge and J. Russ and S. Sala and M. Sampietro and S. Schnetzer and S. Sciortino and H. Stelzer and R. Stone and B. Suter and Tapper, {R. J.} and R. Tesarek and W. Trischuk and D. Tromson and E. Vittone and Walsh, {A. M.} and R. Wedenig and P. Weilhammer and M. Wetstein and C. White and W. Zeuner and M. Zoeller and R. Plano and Somalwar, {S. V.} and Thomson, {G. B.}",

year = "2002",

month = jan,

day = "11",

doi = "10.1016/S0168-9002(01)01665-5",

language = "British English",

volume = "476",

pages = "739--743",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "3",

note = "Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) ; Conference date: 28-06-2000 Through 30-06-2000",

}

Adam, W, Berdermann, E, Bergonzo, P, Bertuccio, G, Bogani, F, Borchi, E, Brambilla, A, Bruzzi, M, Colledani, C, Conway, J, D'Angelo, P, Dabrowski, W, Delpierre, P, Deneuville, A, Dulinski, W, Van Eijk, B, Fallou, A, Fizzotti, F, Foulon, F, Friedl, M, Gan, KK, Gheeraert, E, Hallewell, G, Han, S, Hartjes, F, Hrubec, J, Husson, D, Kagan, H, Kania, D, Kaplon, J, Kass, R, Koeth, T, Krammer, M, Logiudice, A, Lu, R, Mac Lynne, L, Manfredotti, C, Meier, D, Mishina, M, Moroni, L, Noomen, J, Oh, A, Pan, LS, Pernicka, M, Peitz, A, Perera, L, Pirollo, S, Procario, M, Riester, JL, Roe, S, Rousseau, L, Rudge, A, Russ, J, Sala, S, Sampietro, M, Schnetzer, S, Sciortino, S, Stelzer, H, Stone, R, Suter, B, Tapper, RJ, Tesarek, R, Trischuk, W, Tromson, D, Vittone, E, Walsh, AM, Wedenig, R, Weilhammer, P, Wetstein, M, White, C, Zeuner, W, Zoeller, M, Plano, R, Somalwar, SV & Thomson, GB 2002, 'Performance of 500 μm thick silicon microstrip detectors after irradiation', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 476, no. 3, pp. 739-743. https://doi.org/10.1016/S0168-9002(01)01665-5

Performance of 500 μm thick silicon microstrip detectors after irradiation. / Adam, W.; Berdermann, E.; Bergonzo, P. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 476, No. 3, 11.01.2002, p. 739-743.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Performance of 500 μm thick silicon microstrip detectors after irradiation

AU - Adam, W.

AU - Berdermann, E.

AU - Bergonzo, P.

AU - Bertuccio, G.

AU - Bogani, F.

AU - Borchi, E.

AU - Brambilla, A.

AU - Bruzzi, M.

AU - Colledani, C.

AU - Conway, J.

AU - D'Angelo, P.

AU - Dabrowski, W.

AU - Delpierre, P.

AU - Deneuville, A.

AU - Dulinski, W.

AU - Van Eijk, B.

AU - Fallou, A.

AU - Fizzotti, F.

AU - Foulon, F.

AU - Friedl, M.

AU - Gan, K. K.

AU - Gheeraert, E.

AU - Hallewell, G.

AU - Han, S.

AU - Hartjes, F.

AU - Hrubec, J.

AU - Husson, D.

AU - Kagan, H.

AU - Kania, D.

AU - Kaplon, J.

AU - Kass, R.

AU - Koeth, T.

AU - Krammer, M.

AU - Logiudice, A.

AU - Lu, R.

AU - Mac Lynne, L.

AU - Manfredotti, C.

AU - Meier, D.

AU - Mishina, M.

AU - Moroni, L.

AU - Noomen, J.

AU - Oh, A.

AU - Pan, L. S.

AU - Pernicka, M.

AU - Peitz, A.

AU - Perera, L.

AU - Pirollo, S.

AU - Procario, M.

AU - Riester, J. L.

AU - Roe, S.

AU - Rousseau, L.

AU - Rudge, A.

AU - Russ, J.

AU - Sala, S.

AU - Sampietro, M.

AU - Schnetzer, S.

AU - Sciortino, S.

AU - Stelzer, H.

AU - Stone, R.

AU - Suter, B.

AU - Tapper, R. J.

AU - Tesarek, R.

AU - Trischuk, W.

AU - Tromson, D.

AU - Vittone, E.

AU - Walsh, A. M.

AU - Wedenig, R.

AU - Weilhammer, P.

AU - Wetstein, M.

AU - White, C.

AU - Zeuner, W.

AU - Zoeller, M.

AU - Plano, R.

AU - Somalwar, S. V.

AU - Thomson, G. B.

PY - 2002/1/11

Y1 - 2002/1/11

N2 - This paper investigates the performance of 500 μm thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard 300 μm sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that 500 μm thick devices are a promising technology for very large tracking systems.

AB - This paper investigates the performance of 500 μm thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard 300 μm sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that 500 μm thick devices are a promising technology for very large tracking systems.

KW - 6-inch technology

KW - Radiation damage

KW - Silicon microstrip detectors

UR - http://www.scopus.com/inward/record.url?scp=0037059369&partnerID=8YFLogxK

U2 - 10.1016/S0168-9002(01)01665-5

DO - 10.1016/S0168-9002(01)01665-5

M3 - Conference article

AN - SCOPUS:0037059369

SN - 0168-9002

VL - 476

SP - 739

EP - 743

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 3

T2 - Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K)

Y2 - 28 June 2000 through 30 June 2000

ER -

Performance of 500 μm thick silicon microstrip detectors after irradiation

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Keywords

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