Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

A. Sleiman; M. C. Rosamond; M. Alba Martin; A. Ayesh; A. Al Ghaferi; A. J. Gallant; M. F. Mabrook; D. A. Zeze

doi:10.1063/1.3675856

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

A. Sleiman, M. C. Rosamond, M. Alba Martin, A. Ayesh, A. Al Ghaferi, A. J. Gallant, M. F. Mabrook, D. A. Zeze

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ±30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 10 ¹¹cm ^-2) and demonstrated 94% charge retention due to the superior encapsulation.

Original language	British English
Article number	023302
Journal	Applied Physics Letters
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.3675856
State	Published - 9 Jan 2012

Access to Document

10.1063/1.3675856

Cite this

@article{3fed94d8b4b04de1b3bf043322ebd5da,

title = "Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate",

abstract = "A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ±30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 10 11cm -2) and demonstrated 94% charge retention due to the superior encapsulation.",

author = "A. Sleiman and Rosamond, {M. C.} and {Alba Martin}, M. and A. Ayesh and {Al Ghaferi}, A. and Gallant, {A. J.} and Mabrook, {M. F.} and Zeze, {D. A.}",

note = "Funding Information: This work was funded by the British Council through the PMI2 Connect program, Grant No. RC GS 249. The authors are grateful for the fruitful discussions with Professor D. M. Taylor (Bangor University). The authors also thank Professor M. C. Petty (Durham University) for facilitating access to the cleanroom facilities.",

year = "2012",

month = jan,

day = "9",

doi = "10.1063/1.3675856",

language = "British English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

AU - Sleiman, A.

AU - Rosamond, M. C.

AU - Alba Martin, M.

AU - Ayesh, A.

AU - Al Ghaferi, A.

AU - Gallant, A. J.

AU - Mabrook, M. F.

AU - Zeze, D. A.

N1 - Funding Information: This work was funded by the British Council through the PMI2 Connect program, Grant No. RC GS 249. The authors are grateful for the fruitful discussions with Professor D. M. Taylor (Bangor University). The authors also thank Professor M. C. Petty (Durham University) for facilitating access to the cleanroom facilities.

PY - 2012/1/9

Y1 - 2012/1/9

N2 - A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ±30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 10 11cm -2) and demonstrated 94% charge retention due to the superior encapsulation.

AB - A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ±30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 10 11cm -2) and demonstrated 94% charge retention due to the superior encapsulation.

UR - http://www.scopus.com/inward/record.url?scp=84855927733&partnerID=8YFLogxK

U2 - 10.1063/1.3675856

DO - 10.1063/1.3675856

M3 - Article

AN - SCOPUS:84855927733

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023302

ER -

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this