Origin of competing blue and green emission in InGaN/GaN quantum-disks in nanowires heterostructure

Aditya Prabaswara, Tien Khee Ng, Dalaver Anjum, Nini Wei, Chao Zhao, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the mechanism of emission quenching for InGaN/GaN quantum-disks in nanowires heterostructure grown catalyst-free using plasma-assisted molecular beam epitaxy. Temperature-dependent photoluminescence measurement shows the existence of blue and green emission spectra, with the blue peak quenched at room temperature. Characterization results suggest that the quenching is caused by the presence of stacking faults, strain, and the possibility of point defects in the active region.

Original languageBritish English
Title of host publication2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467393621
DOIs
StatePublished - 22 Mar 2016
Event10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 - Anchorage, United States
Duration: 12 Sep 201516 Sep 2015

Publication series

Name2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

Conference

Conference10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
Country/TerritoryUnited States
CityAnchorage
Period12/09/1516/09/15

Keywords

  • GaN
  • InGaN
  • molecular beam epitaxy
  • nanowire

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