TY - JOUR
T1 - Optimization of ZnSe film growth conditions for p-type doping
AU - Zhang, Xiaojun
AU - Beres, Matthew
AU - Ma, Zhixun
AU - Mao, Samuel S.
N1 - Funding Information:
This research has been supported by US Department of Energy, under contract number DE-AC02-05CH11231. The authors would like to thank Jianfeng Xu for his valuable comments.
PY - 2014/2
Y1 - 2014/2
N2 - Wide bandgap semiconductors such as ZnSe and ZnO have attracted great interest due to their applications in solar cells, light emitting diodes, and lasers. However, these wide bandgap semiconductors are frequently difficult to be doped to heavy concentrations, greatly limiting their application. A substrate holder with a natural temperature gradient was developed for batch growth of films at different deposition temperatures, in order to investigate ZnSe film growth and doping challenges. Thin ZnSe films were grown by pulsed laser deposition and characterized using X-ray diffraction, optical transmission and reflection, Raman spectroscopy, and Energy Dispersive X-ray analysis. Deposition temperature and film stoichiometry (Zn:Se) are shown to be significant factors affecting ZnSe growth and doping. ZnSe films with improved crystallinity have been obtained by enriching with selenium and depositing at an optimized temperature. Heavily p-type ZnSe films with hole concentrations of ~2.7 × 1019 cm-3 and resistivities of ~0.099 Ohm cm have been obtained (compared with previous reports of ~1 × 1018 cm-3 and ~0.75 Ohm cm). The results, which are consistent with previous theoretical prediction of compensating defects in ZnSe films, can help to optimize ZnSe growth conditions and understand doping challenges in wide bandgap semiconductors.
AB - Wide bandgap semiconductors such as ZnSe and ZnO have attracted great interest due to their applications in solar cells, light emitting diodes, and lasers. However, these wide bandgap semiconductors are frequently difficult to be doped to heavy concentrations, greatly limiting their application. A substrate holder with a natural temperature gradient was developed for batch growth of films at different deposition temperatures, in order to investigate ZnSe film growth and doping challenges. Thin ZnSe films were grown by pulsed laser deposition and characterized using X-ray diffraction, optical transmission and reflection, Raman spectroscopy, and Energy Dispersive X-ray analysis. Deposition temperature and film stoichiometry (Zn:Se) are shown to be significant factors affecting ZnSe growth and doping. ZnSe films with improved crystallinity have been obtained by enriching with selenium and depositing at an optimized temperature. Heavily p-type ZnSe films with hole concentrations of ~2.7 × 1019 cm-3 and resistivities of ~0.099 Ohm cm have been obtained (compared with previous reports of ~1 × 1018 cm-3 and ~0.75 Ohm cm). The results, which are consistent with previous theoretical prediction of compensating defects in ZnSe films, can help to optimize ZnSe growth conditions and understand doping challenges in wide bandgap semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=84893757029&partnerID=8YFLogxK
U2 - 10.1007/s00339-013-8163-8
DO - 10.1007/s00339-013-8163-8
M3 - Article
AN - SCOPUS:84893757029
SN - 0947-8396
VL - 114
SP - 347
EP - 350
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 2
ER -