Abstract
The electronic structure of normal spinel structure ZnRh 2O 4 is investigated using combined optical properties measurements and density functional calculations. We find semiconducting behavior with an indirect band gap between crystal field split Rh 4d levels, with a t 2g valence band and an e g conduction band. The band gap is found to be ∼1.2 eV based on a comparison of the calculated and measured optical conductivities. The results are discussed in terms of potential photoelectrochemical applications.
| Original language | British English |
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| Pages (from-to) | 2696-2700 |
| Number of pages | 5 |
| Journal | Chemistry of Materials |
| Volume | 18 |
| Issue number | 11 |
| DOIs | |
| State | Published - 30 May 2006 |