Optical gain characteristics and excitonic nonlinearities in II-VI laser diodes

P. Michler, M. Vehse, J. Gutowski, M. Behringer, D. Hommel, M. F. Pereira, K. Henneberger

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Gain characteristics and lasing of (Zn, Cd)Se/Zn(S, Se)/(Zn, Mg)(S, Se) separate confinement heterostructures are investigated by optical-gain spectroscopy and by high-excitation spectroscopy under quasi-stationary conditions. The optical gain is measured by means of the stripe-length method whereas excitonic bleaching under lasing conditions is analyzed through two-beam photoluminescence excitation (PLE) spectroscopy. At low lattice temperature, we find a rather low threshold density of 15-20 kW/cm2 for both laser structures and the excitonic enhancement is still preserved at the onset of lasing. The red shift of the gain maximum with respect to the low-density PLE exciton peak increases with temperature. The results indicate a considerable influence of Coulomb correlations even at the high densities necessary for stimulated emission and are more adequately explained by a strongly correlated electron-hole plasma model that goes beyond the simple "excitonic lasing" concept.

Original languageBritish English
Pages (from-to)575-579
Number of pages5
JournalJournal of Crystal Growth
StatePublished - 1998


  • Carrier-carrier interaction
  • Excitonic nonlinearities
  • Gain
  • Lasing
  • Optical properties
  • Semiconductors


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