Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

L. X. Zheng; M. H. Xie; S. M. Seutter; S. H. Cheung; S. Y. Tong

doi:10.1103/PhysRevLett.85.2352

Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

L. X. Zheng, M. H. Xie, S. M. Seutter, S. H. Cheung, S. Y. Tong

Mechanical & Nuclear Engineering

University of Hong Kong

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

GaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.

Original language	British English
Pages (from-to)	2352-2355
Number of pages	4
Journal	Physical Review Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.85.2352
State	Published - 11 Sep 2000

Access to Document

10.1103/PhysRevLett.85.2352

Cite this

@article{a7fa37222e3b4f958904708959f4f53f,

title = "Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy",

abstract = "GaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.",

author = "Zheng, {L. X.} and Xie, {M. H.} and Seutter, {S. M.} and Cheung, {S. H.} and Tong, {S. Y.}",

year = "2000",

month = sep,

day = "11",

doi = "10.1103/PhysRevLett.85.2352",

language = "British English",

volume = "85",

pages = "2352--2355",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "11",

}

TY - JOUR

T1 - Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

AU - Zheng, L. X.

AU - Xie, M. H.

AU - Seutter, S. M.

AU - Cheung, S. H.

AU - Tong, S. Y.

PY - 2000/9/11

Y1 - 2000/9/11

N2 - GaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.

AB - GaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.

UR - http://www.scopus.com/inward/record.url?scp=0034274802&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.85.2352

DO - 10.1103/PhysRevLett.85.2352

M3 - Article

AN - SCOPUS:0034274802

SN - 0031-9007

VL - 85

SP - 2352

EP - 2355

JO - Physical Review Letters

JF - Physical Review Letters

IS - 11

ER -

Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this