Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

L. X. Zheng, M. H. Xie, S. M. Seutter, S. H. Cheung, S. Y. Tong

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

GaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.

Original languageBritish English
Pages (from-to)2352-2355
Number of pages4
JournalPhysical Review Letters
Volume85
Issue number11
DOIs
StatePublished - 11 Sep 2000

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