O-band TE- and TM-mode densely packed adiabatically bent waveguide arrays on the silicon-on-insulator platform

Humaira Zafar, Bruna Paredes, Juan Villegas, Mahmoud Rasras, Mauro Fernandes Pereira

    Research output: Contribution to journalArticlepeer-review

    7 Scopus citations

    Abstract

    An efficient, dual-polarization silicon waveguide array with low insertion losses and negligible crosstalks for both TE and TM polarizations has been reported using S-shaped adiabatically bent waveguides. Simulation results for a single S-shaped bend show an insertion loss (IL) of ≤ 0.03 dB and ≤ 0.1 dB for the TE and TM polarizations, respectively, and TE and TM crosstalk values in the first neighboring waveguides at either side of the input waveguide are lower than −39 dB and −24 dB, respectively, over the wavelength range of 1.24 µm to 1.38 µm. The bent waveguide arrays exhibit a measured average TE IL of ≈ 0.1 dB, measured TE crosstalks in the first neighboring waveguides are ≤ −35 dB, at the 1310 nm communication wavelength. The proposed bent array can be made by using multiple cascaded S-shaped bends to transmit signals to all optical components in integrated chips.

    Original languageBritish English
    Pages (from-to)21389-21398
    Number of pages10
    JournalOptics Express
    Volume31
    Issue number13
    DOIs
    StatePublished - 19 Jun 2023

    Fingerprint

    Dive into the research topics of 'O-band TE- and TM-mode densely packed adiabatically bent waveguide arrays on the silicon-on-insulator platform'. Together they form a unique fingerprint.

    Cite this