@inproceedings{d37b9710e1684a7c85b20d8d9ed0c71a,
title = "Numerical analysis of nano schottky junctions for developing novel sub-20 nm electronic devices",
abstract = "Nano metal-semiconductor contacts in sub-20 nm range have showed unusual electrical characteristics compared to conventional diodes. New devices based on nano Schottky junction have been proposed to overcome the limitations of CMOS devices. Here we introduce a new theoretical approach for studying the enhancement of the electric field at the interface, and then the net current along the junction. The results revealed a dominant tunneling current at the reverse bias for low n-dope semiconductor substrates. Whereas for high n-dope substrates, the thermionic current is dominant at the forward bias. We have used a finite element simulation software (COMSOL) to analyze the electrical characteristics of nano Schottky diodes, and compare the theoretical results with experimental data.",
keywords = "Nano Devices, Nano Metal Particles, Nano Schottky Junctions, Thermionic Current, Tunneling Current",
author = "Khouloud Eledlebi and Mohammed Ismail and Moh'D Rezeq",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 ; Conference date: 07-12-2014 Through 10-12-2014",
year = "2015",
month = feb,
day = "25",
doi = "10.1109/ICECS.2014.7050032",
language = "British English",
series = "2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "502--505",
booktitle = "2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014",
address = "United States",
}