Novel vs conventional bipolar logic circuit topologies in 4H-SiC

Hazem Elgabra; Amna Siddiqui; Shakti Singh

doi:10.4028/www.scientific.net/MSF.858.1103

Novel vs conventional bipolar logic circuit topologies in 4H-SiC

Hazem Elgabra, Amna Siddiqui, Shakti Singh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh environment applications due to its superior inherent electrical properties. Though current research is geared towards adapting existing silicon based digital logic technologies to 4H-SiC, the true merit of each technology in 4H-SiC has remained unclear. Creating logic technologies specifically for 4H-SiC, taking into account its electrical properties, is an area which remains unexplored. In this paper, we present a novel bipolar logic technology that is designed and optimized for 4H-SiC, and compare its performance with the prevalent bipolar technologies. The results show that the novel logic technology not only compares well with the conventional technologies in performance, but also features simpler design, smaller footprint, and a low transistor count.

Original language	British English
Title of host publication	Silicon Carbide and Related Materials 2015
Editors	Fabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
Pages	1103-1106
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.858.1103
State	Published - 2016
Event	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy Duration: 4 Oct 2015 → 9 Oct 2015

Publication series

Name	Materials Science Forum
Volume	858
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Country/Territory	Italy
City	Sicily
Period	4/10/15 → 9/10/15

Keywords

4H-SiC
Bipolar logic technology
Emitter-coupled logic (ECL)
High temperature
Integrated circuit
Novel technology
Transistor-transistor Logic (TTL)

Access to Document

10.4028/www.scientific.net/MSF.858.1103

Cite this

@inproceedings{a2c75e6d3e33490d88cd5a443f7e57c2,

title = "Novel vs conventional bipolar logic circuit topologies in 4H-SiC",

abstract = "Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh environment applications due to its superior inherent electrical properties. Though current research is geared towards adapting existing silicon based digital logic technologies to 4H-SiC, the true merit of each technology in 4H-SiC has remained unclear. Creating logic technologies specifically for 4H-SiC, taking into account its electrical properties, is an area which remains unexplored. In this paper, we present a novel bipolar logic technology that is designed and optimized for 4H-SiC, and compare its performance with the prevalent bipolar technologies. The results show that the novel logic technology not only compares well with the conventional technologies in performance, but also features simpler design, smaller footprint, and a low transistor count.",

keywords = "4H-SiC, Bipolar logic technology, Emitter-coupled logic (ECL), High temperature, Integrated circuit, Novel technology, Transistor-transistor Logic (TTL)",

author = "Hazem Elgabra and Amna Siddiqui and Shakti Singh",

note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",

year = "2016",

doi = "10.4028/www.scientific.net/MSF.858.1103",

language = "British English",

isbn = "9783035710427",

series = "Materials Science Forum",

pages = "1103--1106",

editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",

booktitle = "Silicon Carbide and Related Materials 2015",

}

Elgabra, H, Siddiqui, A & Singh, S 2016, Novel vs conventional bipolar logic circuit topologies in 4H-SiC. in F Roccaforte, F Giannazzo, F La Via, R Nipoti, D Crippa & M Saggio (eds), Silicon Carbide and Related Materials 2015. Materials Science Forum, vol. 858, pp. 1103-1106, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 4/10/15. https://doi.org/10.4028/www.scientific.net/MSF.858.1103

Novel vs conventional bipolar logic circuit topologies in 4H-SiC. / Elgabra, Hazem; Siddiqui, Amna; Singh, Shakti.
Silicon Carbide and Related Materials 2015. ed. / Fabrizio Roccaforte; Filippo Giannazzo; Francesco La Via; Roberta Nipoti; Danilo Crippa; Mario Saggio. 2016. p. 1103-1106 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Novel vs conventional bipolar logic circuit topologies in 4H-SiC

AU - Elgabra, Hazem

AU - Siddiqui, Amna

AU - Singh, Shakti

PY - 2016

Y1 - 2016

N2 - Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh environment applications due to its superior inherent electrical properties. Though current research is geared towards adapting existing silicon based digital logic technologies to 4H-SiC, the true merit of each technology in 4H-SiC has remained unclear. Creating logic technologies specifically for 4H-SiC, taking into account its electrical properties, is an area which remains unexplored. In this paper, we present a novel bipolar logic technology that is designed and optimized for 4H-SiC, and compare its performance with the prevalent bipolar technologies. The results show that the novel logic technology not only compares well with the conventional technologies in performance, but also features simpler design, smaller footprint, and a low transistor count.

AB - Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh environment applications due to its superior inherent electrical properties. Though current research is geared towards adapting existing silicon based digital logic technologies to 4H-SiC, the true merit of each technology in 4H-SiC has remained unclear. Creating logic technologies specifically for 4H-SiC, taking into account its electrical properties, is an area which remains unexplored. In this paper, we present a novel bipolar logic technology that is designed and optimized for 4H-SiC, and compare its performance with the prevalent bipolar technologies. The results show that the novel logic technology not only compares well with the conventional technologies in performance, but also features simpler design, smaller footprint, and a low transistor count.

KW - 4H-SiC

KW - Bipolar logic technology

KW - Emitter-coupled logic (ECL)

KW - High temperature

KW - Integrated circuit

KW - Novel technology

KW - Transistor-transistor Logic (TTL)

UR - http://www.scopus.com/inward/record.url?scp=84971524812&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.858.1103

DO - 10.4028/www.scientific.net/MSF.858.1103

M3 - Conference contribution

AN - SCOPUS:84971524812

SN - 9783035710427

T3 - Materials Science Forum

SP - 1103

EP - 1106

BT - Silicon Carbide and Related Materials 2015

A2 - Roccaforte, Fabrizio

A2 - Giannazzo, Filippo

A2 - La Via, Francesco

A2 - Nipoti, Roberta

A2 - Crippa, Danilo

A2 - Saggio, Mario

T2 - 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

Y2 - 4 October 2015 through 9 October 2015

ER -

Novel vs conventional bipolar logic circuit topologies in 4H-SiC

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this