Novel hafnium oxide memristor device: Switching behaviour and size effect

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Unipolar RRAM devices are of high interest due to their high resistance ratio and simple selector circuit. In this paper, we report on a measurements from nano-thick memristor featuring a novel Pd/Hf/HfO2/Pd stack. The fabricated device exhibits a unipolar switching behavior, due to the asymmetric device structure and the existence of the Pd metal as a bottom electrode. The forming voltage of the proposed memristive stack (Hf-10nm/HfO2-10nm) is found to be size dependent at the microscale and its average forming voltage decreases by 20% when the active area increases from 30×30 to 1000×1000 μm2. The findings presented in this work highlight the impact of device geometry on its electrical performance and power, which provide guidance to the design tradeoffs (size, power, resistance ratio) and fabrication process of memristor devices.

Original languageBritish English
Title of host publicationIEEE International Symposium on Circuits and Systems
Subtitle of host publicationFrom Dreams to Innovation, ISCAS 2017 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467368520
DOIs
StatePublished - 25 Sep 2017
Event50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 - Baltimore, United States
Duration: 28 May 201731 May 2017

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference50th IEEE International Symposium on Circuits and Systems, ISCAS 2017
Country/TerritoryUnited States
CityBaltimore
Period28/05/1731/05/17

Keywords

  • capping
  • device size
  • HfO2
  • nano-thick memristor
  • unipolar

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