Novel GaAs0.71P0.29/Si tandem step-cell design

Sabina Abdul Hadi; Evelina Polyzoeva; Tim Milakovich; Mayank Bulsara; Judy L. Hoyt; Eugene A. Fitzgerald; Ammar Nayfeh

doi:10.1109/PVSC.2014.6925114

Novel GaAs_0.71P_0.29/Si tandem step-cell design

Sabina Abdul Hadi
, Evelina Polyzoeva
, Tim Milakovich
, Mayank Bulsara
, Judy L. Hoyt
, Eugene A. Fitzgerald
, Ammar Nayfeh

Electrical Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

A novel GaAs_0.71P_0.29/Si tandem cell is proposed and simulated. In order to grow GaAs_0.71P_0.29 layers on Si, Si_1-yGe_y (SiGe) buffer layers can be used but optical losses are expected. To reduce large optical losses a wafer bonded/layer transferred structure can be used that eliminates the SiGe buffer layer. In this work we propose a novel tandem step-cell design that partially exposes the underlying Si cell for both wafer bonded and SiGe based cells. We demonstrate by experiment and simulation mitigation of the optical losses associated with SiGe buffer layers. For an optimized GaAs_0.71P_0.29/Si tandem cell without the step cell design, simulations estimate ∼20% efficiency for the bonded structure and ∼3% for the as grown structure with a SiGe buffer. With the proposed novel step-cell design, optimum efficiency of bonded structure increases to ∼32% while for structures with SiGe the simulated efficiency reaches ∼23%. Optimum exposure of bottom cell area increases with increasing thickness and lifetime of layers above the bottom Si cell.

Original language	British English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1127-1131
Number of pages	5
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925114
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

GaAsP
multi-junction
photovoltaic
SiGe
silicon
step-tandem cell
TCAD

Access to Document

10.1109/PVSC.2014.6925114

OpenUrl availability

Full text

Cite this

Hadi, S. A., Polyzoeva, E., Milakovich, T., Bulsara, M., Hoyt, J. L., Fitzgerald, E. A., & Nayfeh, A. (2014). Novel GaAs_0.71P_0.29/Si tandem step-cell design. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1127-1131). Article 6925114 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925114

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title = "Novel GaAs0.71P0.29/Si tandem step-cell design",

abstract = "A novel GaAs0.71P0.29/Si tandem cell is proposed and simulated. In order to grow GaAs0.71P0.29 layers on Si, Si1-yGey (SiGe) buffer layers can be used but optical losses are expected. To reduce large optical losses a wafer bonded/layer transferred structure can be used that eliminates the SiGe buffer layer. In this work we propose a novel tandem step-cell design that partially exposes the underlying Si cell for both wafer bonded and SiGe based cells. We demonstrate by experiment and simulation mitigation of the optical losses associated with SiGe buffer layers. For an optimized GaAs0.71P0.29/Si tandem cell without the step cell design, simulations estimate ∼20\% efficiency for the bonded structure and ∼3\% for the as grown structure with a SiGe buffer. With the proposed novel step-cell design, optimum efficiency of bonded structure increases to ∼32\% while for structures with SiGe the simulated efficiency reaches ∼23\%. Optimum exposure of bottom cell area increases with increasing thickness and lifetime of layers above the bottom Si cell.",

keywords = "GaAsP, multi-junction, photovoltaic, SiGe, silicon, step-tandem cell, TCAD",

author = "Hadi, \{Sabina Abdul\} and Evelina Polyzoeva and Tim Milakovich and Mayank Bulsara and Hoyt, \{Judy L.\} and Fitzgerald, \{Eugene A.\} and Ammar Nayfeh",

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Hadi, SA, Polyzoeva, E, Milakovich, T, Bulsara, M, Hoyt, JL, Fitzgerald, EA & Nayfeh, A 2014, Novel GaAs_0.71P_0.29/Si tandem step-cell design. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925114, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 1127-1131, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925114

Novel GaAs_0.71P_0.29/Si tandem step-cell design. / Hadi, Sabina Abdul; Polyzoeva, Evelina; Milakovich, Tim et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1127-1131 6925114 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hadi, Sabina Abdul

AU - Polyzoeva, Evelina

AU - Milakovich, Tim

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AU - Fitzgerald, Eugene A.

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AB - A novel GaAs0.71P0.29/Si tandem cell is proposed and simulated. In order to grow GaAs0.71P0.29 layers on Si, Si1-yGey (SiGe) buffer layers can be used but optical losses are expected. To reduce large optical losses a wafer bonded/layer transferred structure can be used that eliminates the SiGe buffer layer. In this work we propose a novel tandem step-cell design that partially exposes the underlying Si cell for both wafer bonded and SiGe based cells. We demonstrate by experiment and simulation mitigation of the optical losses associated with SiGe buffer layers. For an optimized GaAs0.71P0.29/Si tandem cell without the step cell design, simulations estimate ∼20% efficiency for the bonded structure and ∼3% for the as grown structure with a SiGe buffer. With the proposed novel step-cell design, optimum efficiency of bonded structure increases to ∼32% while for structures with SiGe the simulated efficiency reaches ∼23%. Optimum exposure of bottom cell area increases with increasing thickness and lifetime of layers above the bottom Si cell.

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