Abstract
Inverter topologies for integrating a rooftop photovoltaic (PV) unit into a microgrid are becoming increasingly complex. This paper proposes a high-voltage boosting transformerless inverter (HVBTI) topology for enhancing such applications. The coupled inductor-based high voltage gain feature of the HVBTI configuration allows power to be delivered into the grid from a lower voltage PV source without using higher duties. In addition, HVBTI suppresses leakage current as the common connection shared between the -ve terminal of the PV source and the grid neutral point. In comparison to existing topologies, the HVBTI topology uses a compact pulse width modulation strategy to control only six controllable switching devices. Again, using lower-rated switching devices is more cost-effective while increasing reliability and efficiency. In a laboratory prototype of a 1 kVA grid integrated system, the proposed HVBTI configuration is validated, and the maximum efficiency of the HVBTI is estimated at approximately 95%.
| Original language | British English |
|---|---|
| Pages (from-to) | 6273-6287 |
| Number of pages | 15 |
| Journal | IEEE Transactions on Industry Applications |
| Volume | 59 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 Sep 2023 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Boosting inverter
- low switch count
- microgrid
- rooftop photovoltaics
- voltage gain
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