Novel 1-varphi High-Voltage Boosting Transformerless Inverter Topology with Optimal Power Components and Negligible Leakage Currents

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    Abstract

    Inverter topologies for integrating a rooftop photovoltaic (PV) unit into a microgrid are becoming increasingly complex. This paper proposes a high-voltage boosting transformerless inverter (HVBTI) topology for enhancing such applications. The coupled inductor-based high voltage gain feature of the HVBTI configuration allows power to be delivered into the grid from a lower voltage PV source without using higher duties. In addition, HVBTI suppresses leakage current as the common connection shared between the -ve terminal of the PV source and the grid neutral point. In comparison to existing topologies, the HVBTI topology uses a compact pulse width modulation strategy to control only six controllable switching devices. Again, using lower-rated switching devices is more cost-effective while increasing reliability and efficiency. In a laboratory prototype of a 1 kVA grid integrated system, the proposed HVBTI configuration is validated, and the maximum efficiency of the HVBTI is estimated at approximately 95%.

    Original languageBritish English
    Pages (from-to)6273-6287
    Number of pages15
    JournalIEEE Transactions on Industry Applications
    Volume59
    Issue number5
    DOIs
    StatePublished - 1 Sep 2023

    Keywords

    • Boosting inverter
    • low switch count
    • microgrid
    • rooftop photovoltaics
    • voltage gain

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