New technique for the fabrication of thin silicon radiation detectors

F. Foulon; L. Rousseau; L. Babadjian; S. Spirkovitch; A. Brambilla; P. Bergonzo

New technique for the fabrication of thin silicon radiation detectors

F. Foulon, L. Rousseau, L. Babadjian, S. Spirkovitch, A. Brambilla, P. Bergonzo

Centre d'Etudes Nucléaires de Saclay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A new technique has been developed for fabrication of thin detectors based on the use of substrates presenting a buried etch-stop layer. Using this technique, thickness uniformity as low as ± 0.05 μm can be obtained on 5 μm thick detectors over 100 mm² area. The development of this technique constitutes a breakthrough towards the low cost fabrication of thin silicon radiation detectors using planar technology.

Original language	British English
Title of host publication	IEEE Nuclear Science Symposium and Medical Imaging Conference
Pages	681-683
Number of pages	3
State	Published - 1999
Event	Proceedings of the 1998 IEEE Nuclear Science Symposium Conference Record - Toronto, Que, Can Duration: 8 Nov 1998 → 14 Nov 1998

Publication series

Name	IEEE Nuclear Science Symposium and Medical Imaging Conference
Volume	1

Conference

Conference	Proceedings of the 1998 IEEE Nuclear Science Symposium Conference Record
City	Toronto, Que, Can
Period	8/11/98 → 14/11/98

Cite this

@inproceedings{e6880c73fa6348a3bdc0930ddf981a16,

title = "New technique for the fabrication of thin silicon radiation detectors",

abstract = "A new technique has been developed for fabrication of thin detectors based on the use of substrates presenting a buried etch-stop layer. Using this technique, thickness uniformity as low as ± 0.05 μm can be obtained on 5 μm thick detectors over 100 mm2 area. The development of this technique constitutes a breakthrough towards the low cost fabrication of thin silicon radiation detectors using planar technology.",

author = "F. Foulon and L. Rousseau and L. Babadjian and S. Spirkovitch and A. Brambilla and P. Bergonzo",

year = "1999",

language = "British English",

isbn = "0780350227",

series = "IEEE Nuclear Science Symposium and Medical Imaging Conference",

pages = "681--683",

booktitle = "IEEE Nuclear Science Symposium and Medical Imaging Conference",

note = "Proceedings of the 1998 IEEE Nuclear Science Symposium Conference Record ; Conference date: 08-11-1998 Through 14-11-1998",

}

Foulon, F, Rousseau, L, Babadjian, L, Spirkovitch, S, Brambilla, A & Bergonzo, P 1999, New technique for the fabrication of thin silicon radiation detectors. in IEEE Nuclear Science Symposium and Medical Imaging Conference. IEEE Nuclear Science Symposium and Medical Imaging Conference, vol. 1, pp. 681-683, Proceedings of the 1998 IEEE Nuclear Science Symposium Conference Record, Toronto, Que, Can, 8/11/98.

New technique for the fabrication of thin silicon radiation detectors. / Foulon, F.; Rousseau, L.; Babadjian, L. et al.
IEEE Nuclear Science Symposium and Medical Imaging Conference. 1999. p. 681-683 (IEEE Nuclear Science Symposium and Medical Imaging Conference; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - New technique for the fabrication of thin silicon radiation detectors

AU - Foulon, F.

AU - Rousseau, L.

AU - Babadjian, L.

AU - Spirkovitch, S.

AU - Brambilla, A.

AU - Bergonzo, P.

PY - 1999

Y1 - 1999

N2 - A new technique has been developed for fabrication of thin detectors based on the use of substrates presenting a buried etch-stop layer. Using this technique, thickness uniformity as low as ± 0.05 μm can be obtained on 5 μm thick detectors over 100 mm2 area. The development of this technique constitutes a breakthrough towards the low cost fabrication of thin silicon radiation detectors using planar technology.

AB - A new technique has been developed for fabrication of thin detectors based on the use of substrates presenting a buried etch-stop layer. Using this technique, thickness uniformity as low as ± 0.05 μm can be obtained on 5 μm thick detectors over 100 mm2 area. The development of this technique constitutes a breakthrough towards the low cost fabrication of thin silicon radiation detectors using planar technology.

UR - http://www.scopus.com/inward/record.url?scp=0032597092&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032597092

SN - 0780350227

T3 - IEEE Nuclear Science Symposium and Medical Imaging Conference

SP - 681

EP - 683

BT - IEEE Nuclear Science Symposium and Medical Imaging Conference

T2 - Proceedings of the 1998 IEEE Nuclear Science Symposium Conference Record

Y2 - 8 November 1998 through 14 November 1998

ER -

New technique for the fabrication of thin silicon radiation detectors

Abstract

Publication series

Conference

Other files and links

Fingerprint

Cite this