New expression for base transit time in a bipolar transistor for all levels of injection

M. M.Shahidul Hassan, A. H. Khandoker

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A new and compact formula for the base transit time in an npn bipolar junction transistor is derived. The collector current density and minority carrier charge within the base are separately expressed as a function of injected electron concentration in the neutral base in order to find an expression for base transit time. The modeling of collector current density, base stored charge and base transit time is essential for the design of high speed bipolar transistors. The derived expressions are applicable for arbitrary injection regions before the onset of the Kirk effect and they are simple and straightforward to give a physical insight into device operation.

Original languageBritish English
Pages (from-to)137-140
Number of pages4
JournalMicroelectronics Reliability
Volume41
Issue number1
DOIs
StatePublished - Jan 2001

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