Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging
- J. Li
- , D. Anjum
- , R. Hull
- , G. Xia
- , J. L. Hoyt
- University of Virginia
- Massachusetts Institute of Technology
Research output: Contribution to journal › Article › peer-review
16
Scopus
citations