TY - JOUR
T1 - Nanoislands-Based Charge Trapping Memory
T2 - A Scalability Study
AU - El-Atab, Nazek
AU - Saadat, Irfan
AU - Saraswat, Krishna
AU - Nayfeh, Ammar
N1 - Funding Information:
Manuscript received September 23, 2017; accepted October 14, 2017. Date of publication October 19, 2017; date of current version November 8, 2017. This work was supported in part by Masdar Institute of Science and Technology and in part by Office of Naval Research Global under Grant N62909-16-1-2031. The review of this letter was arranged by Associate Editor T.-L. Ren. (Corresponding author: Nazek El-Atab.) N. El-Atab, I. Saadat, and A. Nayfeh are with the Department of Electrical Engineering and Computer Science, Masdar Institute of Science and Technology, Abu Dhabi, United Arab Emirates (e-mail: [email protected]; isaadat@ masdar.ac.ae; [email protected]).
Publisher Copyright:
© 2017 IEEE.
PY - 2017/11
Y1 - 2017/11
N2 - Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nanoislands charge trapping layer. Both nanoislands are deposited using atomic layer deposition; however, the different sizes, distribution, and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nanoislands can provide a 9.4 V memory window. However, with ZnO only, 31 nanoislands can provide a window of 2.5 V. The results indicate that ZrO2 nanoislands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and the absence of quantum confinement effects.
AB - Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nanoislands charge trapping layer. Both nanoislands are deposited using atomic layer deposition; however, the different sizes, distribution, and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nanoislands can provide a 9.4 V memory window. However, with ZnO only, 31 nanoislands can provide a window of 2.5 V. The results indicate that ZrO2 nanoislands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and the absence of quantum confinement effects.
KW - atomic layer deposition
KW - Charge trapping memory
KW - nano-islands
KW - scalability
KW - ZnO
KW - ZrO
UR - https://www.scopus.com/pages/publications/85032273346
U2 - 10.1109/TNANO.2017.2764745
DO - 10.1109/TNANO.2017.2764745
M3 - Article
AN - SCOPUS:85032273346
SN - 1536-125X
VL - 16
SP - 1143
EP - 1146
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
IS - 6
M1 - 8074763
ER -