MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer

Nazek El-Atab, Ammar Nayfeh, Berk Berkan Turgut, Ali K. Okyay

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, a MOS memory with 4.56-nm ultrathin Al2O3-TiO2 nanolaminates thin film deposited by Atomic Layer Deposition (ALD) followed by 1-nm HfO2 tunnel oxide deposited by Plasma-Assisted ALD is studied. The charge trapping layer consists of 2.85-nm Si-nanoparticles (Si-NPs). A memory effect is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 5 V and a 3 V Vt shift is obtained at low operating voltage of 6/-6 V. In addition, the calculated retention characteristic of the charges in the Si-NPs memory (>10 years) makes such memory structure promising for applications in non-volatile memory devices.

Original languageBritish English
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages663-665
Number of pages3
ISBN (Electronic)9781467381550
DOIs
StatePublished - 2015
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 27 Jul 201530 Jul 2015

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/TerritoryItaly
CityRome
Period27/07/1530/07/15

Keywords

  • Al2O3-TiO nanolaminates
  • atomic layer deposition
  • Charge trapping memory
  • HfO2
  • MOS
  • retention time

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