MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer

Nazek El-Atab, Ammar Nayfeh, Berk Berkan Turgut, Ali K. Okyay

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this work, the effect of using a double layer of high-κ tunnel oxides Al2O3/HfO2 instead of a single layer Al2O3 in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.

Original languageBritish English
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages766-768
Number of pages3
ISBN (Electronic)9781467381550
DOIs
StatePublished - 2015
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 27 Jul 201530 Jul 2015

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/TerritoryItaly
CityRome
Period27/07/1530/07/15

Keywords

  • Al2O3
  • atomic layer deposition
  • Charge trapping memory
  • HfO2
  • MOS
  • retention time
  • ZnO

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