Abstract
The microscopic mechanism of ultrasonic wire bonding was investigated by molecular dynamics simulation on the interfacial contact and adhesion. Considering that the real bonding area was in the state of plane strain, a two-dimensional atomic model was presented. Sutton-Chen potential was adopted for the interaction among gold atoms. Computational results indicate that after intimate contact between the wire and the bond pad, a strong adhesion generates at the interface, and the adhesion force will be the mechanism of ultrasonic wire bonding. Combining the real contact area from the finite element analysis before, the bonding strength of ultrasonic wire bonding was estimated, which was partially validated by experiments.
| Original language | British English |
|---|---|
| Pages (from-to) | 2496-2500 |
| Number of pages | 5 |
| Journal | Zhongguo Jixie Gongcheng/China Mechanical Engineering |
| Volume | 21 |
| Issue number | 20 |
| State | Published - 25 Oct 2010 |
Keywords
- Bonding strength
- Contact pressure
- Molecular dynamics
- Ultrasonic wire bonding