TY - GEN
T1 - Modulating surface roughness of low temperature PECVD germanium using multilayer drop casting of 2.85 nm silicon nanoparticles
AU - Ashraf, Juveiriah M.
AU - Rezk, Ayman
AU - Alnaqbi, Wafa
AU - Alhammadi, Aisha
AU - Hadi, Sabina Abdul
AU - Nayfeh, Ammar
N1 - Funding Information:
This publication is based upon work supported by the Khalifa University of Science and Technology under Award No. CIRA-8474000181.
Funding Information:
This publication is based upon work supported by the Khalifa University of Science and Technology under Award No. CIRA- 8474000181.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/7
Y1 - 2020/7
N2 - We investigate the effect of multilayer drop casting of silicon nanoparticles (Si-NPs) on the roughness of Germanium (Ge) films grown by low temperature plasma enhanced chemical vapor deposition (PECVD) germanium on an n-doped silicon (Si) substrate. The Si-NPs allow surface roughening and texture modification on a nanoscale. The surface roughness is shown to be controlled using the drop casting method in ambient pressure and temperature followed by topography measurements obtained via atomic force microscopy (AFM). By using the layer-by-layer deposition technique, with an increment of 100 μL each, we fabricated 5 samples with a total of 100 μL, 200 μL, 300 μL, 400 μL and 500 μL of the Si-NPs dispersion volume. A root mean square (RMS) roughness (Rq) of 8 nm is recorded for a 30 nm thick Si-NPs nano-film.
AB - We investigate the effect of multilayer drop casting of silicon nanoparticles (Si-NPs) on the roughness of Germanium (Ge) films grown by low temperature plasma enhanced chemical vapor deposition (PECVD) germanium on an n-doped silicon (Si) substrate. The Si-NPs allow surface roughening and texture modification on a nanoscale. The surface roughness is shown to be controlled using the drop casting method in ambient pressure and temperature followed by topography measurements obtained via atomic force microscopy (AFM). By using the layer-by-layer deposition technique, with an increment of 100 μL each, we fabricated 5 samples with a total of 100 μL, 200 μL, 300 μL, 400 μL and 500 μL of the Si-NPs dispersion volume. A root mean square (RMS) roughness (Rq) of 8 nm is recorded for a 30 nm thick Si-NPs nano-film.
UR - http://www.scopus.com/inward/record.url?scp=85090995608&partnerID=8YFLogxK
U2 - 10.1109/NANO47656.2020.9183406
DO - 10.1109/NANO47656.2020.9183406
M3 - Conference contribution
AN - SCOPUS:85090995608
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 39
EP - 43
BT - NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
PB - IEEE Computer Society
T2 - 20th IEEE International Conference on Nanotechnology, NANO 2020
Y2 - 29 July 2020 through 31 July 2020
ER -