Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

Heba Abunahla, Baker Mohammad, Dirar Homouz, Curtis J. Okelly

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

This paper presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson-Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviors. A detailed MATLAB based algorithm is developed to clarify and simplify the simulation environment. Moreover, the provided model is used to simulate and predict the effect of oxide thickness, material type, and operating temperatures on the electrical characteristics of the device. The parameters of the proposed model are tuned and validated using experimental data of a fabricated wire based NbO1-x junction. This device is attractive for neuromorphic and computing applications, where multilevel state is desirable. The value of this contribution is to provide a framework intended to simulate anionic memristor devices using correlated mathematical models. In addition, the model can be used to explore device materials and predict its performance.

Original languageBritish English
Article number7740907
Pages (from-to)2139-2148
Number of pages10
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume63
Issue number12
DOIs
StatePublished - Dec 2016

Keywords

  • Boltzmann
  • multilevel
  • oxide material
  • potential
  • resistance
  • temperature
  • thickness

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