Modeling of InAs/GaAs quantum dot solar cells

Ayman Rizk; Kazi Islam; Ammar Nayfeh

doi:10.1109/EMS.2013.113

Modeling of InAs/GaAs quantum dot solar cells

Ayman Rizk
, Kazi Islam
, Ammar Nayfeh

Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration and modeled. Also, the size of the quantum dots has been varied from 10 to 60 nm to understand the effects of quantum dot density. The short-circuit current density, open-circuit voltage and efficiency of these cells are presented and compared with a GaAs base cells without QD. Also, the external quantum efficiency of the cells has been demonstrated. The simulation results show an 6.77% increase of efficiency for the best case of quantum dot solar cells compared to the baseline device.

Original language	British English
Pages	677-680
Number of pages	4
DOIs	https://doi.org/10.1109/EMS.2013.113
State	Published - 2013
Event	UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013 - Manchester, United Kingdom Duration: 20 Nov 2013 → 22 Nov 2013

Conference

Conference	UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013
Country/Territory	United Kingdom
City	Manchester
Period	20/11/13 → 22/11/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

GaAs
InAs
Intermediate band
Quantum dots
Solar Cells
TCAD

Access to Document

10.1109/EMS.2013.113

OpenUrl availability

Full text

Cite this

@conference{18ecf56873294872ae48ef93741e76a6,

title = "Modeling of InAs/GaAs quantum dot solar cells",

abstract = "This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration and modeled. Also, the size of the quantum dots has been varied from 10 to 60 nm to understand the effects of quantum dot density. The short-circuit current density, open-circuit voltage and efficiency of these cells are presented and compared with a GaAs base cells without QD. Also, the external quantum efficiency of the cells has been demonstrated. The simulation results show an 6.77\% increase of efficiency for the best case of quantum dot solar cells compared to the baseline device.",

keywords = "GaAs, InAs, Intermediate band, Quantum dots, Solar Cells, TCAD",

author = "Ayman Rizk and Kazi Islam and Ammar Nayfeh",

year = "2013",

doi = "10.1109/EMS.2013.113",

language = "British English",

pages = "677--680",

note = "UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013 ; Conference date: 20-11-2013 Through 22-11-2013",

}

TY - CONF

T1 - Modeling of InAs/GaAs quantum dot solar cells

AU - Rizk, Ayman

AU - Islam, Kazi

AU - Nayfeh, Ammar

PY - 2013

Y1 - 2013

N2 - This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration and modeled. Also, the size of the quantum dots has been varied from 10 to 60 nm to understand the effects of quantum dot density. The short-circuit current density, open-circuit voltage and efficiency of these cells are presented and compared with a GaAs base cells without QD. Also, the external quantum efficiency of the cells has been demonstrated. The simulation results show an 6.77% increase of efficiency for the best case of quantum dot solar cells compared to the baseline device.

AB - This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration and modeled. Also, the size of the quantum dots has been varied from 10 to 60 nm to understand the effects of quantum dot density. The short-circuit current density, open-circuit voltage and efficiency of these cells are presented and compared with a GaAs base cells without QD. Also, the external quantum efficiency of the cells has been demonstrated. The simulation results show an 6.77% increase of efficiency for the best case of quantum dot solar cells compared to the baseline device.

KW - GaAs

KW - InAs

KW - Intermediate band

KW - Quantum dots

KW - Solar Cells

KW - TCAD

UR - https://www.scopus.com/pages/publications/84899564027

U2 - 10.1109/EMS.2013.113

DO - 10.1109/EMS.2013.113

M3 - Paper

AN - SCOPUS:84899564027

SP - 677

EP - 680

T2 - UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013

Y2 - 20 November 2013 through 22 November 2013

ER -

Modeling of InAs/GaAs quantum dot solar cells

Abstract

Conference

UN SDGs

Keywords

Access to Document

OpenUrl availability

Other files and links

Fingerprint

Cite this