Modeling of high performance 4H-SiC emitter coupled logic circuits

Shakti Singh; Nourhan El Sayed; Hazem Elgabra; Tamador Elboshra; Maisam Wahbah; Mariam Al Zaabi

doi:10.4028/www.scientific.net/MSF.778-780.1009

Modeling of high performance 4H-SiC emitter coupled logic circuits

Shakti Singh
, Nourhan El Sayed
, Hazem Elgabra
, Tamador Elboshra
, Maisam Wahbah
, Mariam Al Zaabi

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

SiC, a wide band gap semiconductor, is capable of robust operation at temperatures well above 600°C. SiC bipolar transistors are well suited for applications at high temperatures as, unlike MOSFET, it does not have a critical gate oxide, and hence oxide reliability at high temperatures is not an issue. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. The circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC for small-scale logic applications.

Original language	British English
Title of host publication	Silicon Carbide and Related Materials 2013
Editors	Hajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
Pages	1009-1012
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.778-780.1009
State	Published - 2014
Event	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan Duration: 29 Sep 2013 → 4 Oct 2013

Publication series

Name	Materials Science Forum
Volume	778-780
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country/Territory	Japan
City	Miyazaki
Period	29/09/13 → 4/10/13

Keywords

Emitter-coupled logic (ECL)
High temperature
High-temperature integrated circuits (ICs)
Integrated circuits
SiC ICs
Silicon carbide (SiC)
Smart power

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10.4028/www.scientific.net/MSF.778-780.1009

Cite this

Singh, S., El Sayed, N., Elgabra, H., Elboshra, T., Wahbah, M., & Al Zaabi, M. (2014). Modeling of high performance 4H-SiC emitter coupled logic circuits. In H. Okumura, H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 1009-1012). (Materials Science Forum; Vol. 778-780). https://doi.org/10.4028/www.scientific.net/MSF.778-780.1009

Singh, Shakti ; El Sayed, Nourhan ; Elgabra, Hazem et al. / Modeling of high performance 4H-SiC emitter coupled logic circuits. Silicon Carbide and Related Materials 2013. editor / Hajime Okumura ; Hajime Okumura ; Hiroshi Harima ; Tsunenobu Kimoto ; Masahiro Yoshimoto ; Heiji Watanabe ; Tomoaki Hatayama ; Hideharu Matsuura ; Yasuhisa Sano ; Tsuyoshi Funaki. 2014. pp. 1009-1012 (Materials Science Forum).

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title = "Modeling of high performance 4H-SiC emitter coupled logic circuits",

abstract = "SiC, a wide band gap semiconductor, is capable of robust operation at temperatures well above 600°C. SiC bipolar transistors are well suited for applications at high temperatures as, unlike MOSFET, it does not have a critical gate oxide, and hence oxide reliability at high temperatures is not an issue. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. The circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC for small-scale logic applications.",

keywords = "Emitter-coupled logic (ECL), High temperature, High-temperature integrated circuits (ICs), Integrated circuits, SiC ICs, Silicon carbide (SiC), Smart power",

author = "Shakti Singh and \{El Sayed\}, Nourhan and Hazem Elgabra and Tamador Elboshra and Maisam Wahbah and \{Al Zaabi\}, Mariam",

year = "2014",

doi = "10.4028/www.scientific.net/MSF.778-780.1009",

language = "British English",

isbn = "9783038350101",

series = "Materials Science Forum",

pages = "1009--1012",

editor = "Hajime Okumura and Hajime Okumura and Hiroshi Harima and Tsunenobu Kimoto and Masahiro Yoshimoto and Heiji Watanabe and Tomoaki Hatayama and Hideharu Matsuura and Yasuhisa Sano and Tsuyoshi Funaki",

booktitle = "Silicon Carbide and Related Materials 2013",

note = "15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 ; Conference date: 29-09-2013 Through 04-10-2013",

}

Singh, S, El Sayed, N, Elgabra, H, Elboshra, T, Wahbah, M & Al Zaabi, M 2014, Modeling of high performance 4H-SiC emitter coupled logic circuits. in H Okumura, H Okumura, H Harima, T Kimoto, M Yoshimoto, H Watanabe, T Hatayama, H Matsuura, Y Sano & T Funaki (eds), Silicon Carbide and Related Materials 2013. Materials Science Forum, vol. 778-780, pp. 1009-1012, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 29/09/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.1009

Modeling of high performance 4H-SiC emitter coupled logic circuits. / Singh, Shakti; El Sayed, Nourhan; Elgabra, Hazem et al.
Silicon Carbide and Related Materials 2013. ed. / Hajime Okumura; Hajime Okumura; Hiroshi Harima; Tsunenobu Kimoto; Masahiro Yoshimoto; Heiji Watanabe; Tomoaki Hatayama; Hideharu Matsuura; Yasuhisa Sano; Tsuyoshi Funaki. 2014. p. 1009-1012 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Singh, Shakti

AU - El Sayed, Nourhan

AU - Elgabra, Hazem

AU - Elboshra, Tamador

AU - Wahbah, Maisam

AU - Al Zaabi, Mariam

PY - 2014

Y1 - 2014

N2 - SiC, a wide band gap semiconductor, is capable of robust operation at temperatures well above 600°C. SiC bipolar transistors are well suited for applications at high temperatures as, unlike MOSFET, it does not have a critical gate oxide, and hence oxide reliability at high temperatures is not an issue. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. The circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC for small-scale logic applications.

AB - SiC, a wide band gap semiconductor, is capable of robust operation at temperatures well above 600°C. SiC bipolar transistors are well suited for applications at high temperatures as, unlike MOSFET, it does not have a critical gate oxide, and hence oxide reliability at high temperatures is not an issue. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. The circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC for small-scale logic applications.

KW - Emitter-coupled logic (ECL)

KW - High temperature

KW - High-temperature integrated circuits (ICs)

KW - Integrated circuits

KW - SiC ICs

KW - Silicon carbide (SiC)

KW - Smart power

UR - https://www.scopus.com/pages/publications/84896084768

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DO - 10.4028/www.scientific.net/MSF.778-780.1009

M3 - Conference contribution

AN - SCOPUS:84896084768

SN - 9783038350101

T3 - Materials Science Forum

SP - 1009

EP - 1012

BT - Silicon Carbide and Related Materials 2013

A2 - Okumura, Hajime

A2 - Harima, Hiroshi

A2 - Kimoto, Tsunenobu

A2 - Yoshimoto, Masahiro

A2 - Watanabe, Heiji

A2 - Hatayama, Tomoaki

A2 - Matsuura, Hideharu

A2 - Sano, Yasuhisa

A2 - Funaki, Tsuyoshi

T2 - 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013

Y2 - 29 September 2013 through 4 October 2013

ER -

Singh S, El Sayed N, Elgabra H, Elboshra T, Wahbah M, Al Zaabi M. Modeling of high performance 4H-SiC emitter coupled logic circuits. In Okumura H, Okumura H, Harima H, Kimoto T, Yoshimoto M, Watanabe H, Hatayama T, Matsuura H, Sano Y, Funaki T, editors, Silicon Carbide and Related Materials 2013. 2014. p. 1009-1012. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.778-780.1009

Modeling of high performance 4H-SiC emitter coupled logic circuits

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