Modeling of high performance 4H-SiC emitter coupled logic circuits

Shakti Singh, Nourhan El Sayed, Hazem Elgabra, Tamador Elboshra, Maisam Wahbah, Mariam Al Zaabi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

SiC, a wide band gap semiconductor, is capable of robust operation at temperatures well above 600°C. SiC bipolar transistors are well suited for applications at high temperatures as, unlike MOSFET, it does not have a critical gate oxide, and hence oxide reliability at high temperatures is not an issue. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. The circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC for small-scale logic applications.

Original languageBritish English
Title of host publicationSilicon Carbide and Related Materials 2013
EditorsHajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
Pages1009-1012
Number of pages4
DOIs
StatePublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 29 Sep 20134 Oct 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country/TerritoryJapan
CityMiyazaki
Period29/09/134/10/13

Keywords

  • Emitter-coupled logic (ECL)
  • High temperature
  • High-temperature integrated circuits (ICs)
  • Integrated circuits
  • SiC ICs
  • Silicon carbide (SiC)
  • Smart power

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