Modeling emissivity of rough and textured silicon wafers

Bhushan L. Sopori; Wei Chen; S. Abedrabbo; N. M. Ravindra

doi:10.1007/s11664-998-0094-3

Modeling emissivity of rough and textured silicon wafers

Bhushan L. Sopori
, Wei Chen
, S. Abedrabbo
, N. M. Ravindra

Physics

National Renewable Energy Laboratory
New Jersey Institute of Technology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A method for calculating the emissivity of Si wafers with planar and nonplanar (such as rough or textured) surface morphologies is described. The technique is similar to that used in modeling of light trapping in solar cells and is also applicable to those cases when the wafer may have thin dielectric or metal layers. A software package is developed that uses this method. This package includes an approach for calculating the refractive index and absorption coefficient as a function of wavelength, for various temperatures and dopant concentrations. We present results for a number of cases to demonstrate the applications of this model.

Original language	British English
Pages (from-to)	1341-1346
Number of pages	6
Journal	Journal of Electronic Materials
Volume	27
Issue number	12
DOIs	https://doi.org/10.1007/s11664-998-0094-3
State	Published - Dec 1998

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Absorption coefficient
Emissivity
Refractive index
Silicon wafers
Surface roughness

Access to Document

10.1007/s11664-998-0094-3

OpenUrl availability

Full text

Cite this

@article{70c63c0377804d6588970617e8970174,

title = "Modeling emissivity of rough and textured silicon wafers",

abstract = "A method for calculating the emissivity of Si wafers with planar and nonplanar (such as rough or textured) surface morphologies is described. The technique is similar to that used in modeling of light trapping in solar cells and is also applicable to those cases when the wafer may have thin dielectric or metal layers. A software package is developed that uses this method. This package includes an approach for calculating the refractive index and absorption coefficient as a function of wavelength, for various temperatures and dopant concentrations. We present results for a number of cases to demonstrate the applications of this model.",

keywords = "Absorption coefficient, Emissivity, Refractive index, Silicon wafers, Surface roughness",

author = "Sopori, \{Bhushan L.\} and Wei Chen and S. Abedrabbo and Ravindra, \{N. M.\}",

note = "Funding Information: This work was supported by the U.S. Department of Energy under Contract \#DE-Ac36-83CH10093 and by The DOE Center of Excellence for Synthesis and Processing of Advanced Materials. The authors would like to thank Jamal Madjdpour for his help with developing the code for the calculations.",

year = "1998",

month = dec,

doi = "10.1007/s11664-998-0094-3",

language = "British English",

volume = "27",

pages = "1341--1346",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

}

TY - JOUR

T1 - Modeling emissivity of rough and textured silicon wafers

AU - Sopori, Bhushan L.

AU - Chen, Wei

AU - Abedrabbo, S.

AU - Ravindra, N. M.

N1 - Funding Information: This work was supported by the U.S. Department of Energy under Contract #DE-Ac36-83CH10093 and by The DOE Center of Excellence for Synthesis and Processing of Advanced Materials. The authors would like to thank Jamal Madjdpour for his help with developing the code for the calculations.

PY - 1998/12

Y1 - 1998/12

N2 - A method for calculating the emissivity of Si wafers with planar and nonplanar (such as rough or textured) surface morphologies is described. The technique is similar to that used in modeling of light trapping in solar cells and is also applicable to those cases when the wafer may have thin dielectric or metal layers. A software package is developed that uses this method. This package includes an approach for calculating the refractive index and absorption coefficient as a function of wavelength, for various temperatures and dopant concentrations. We present results for a number of cases to demonstrate the applications of this model.

AB - A method for calculating the emissivity of Si wafers with planar and nonplanar (such as rough or textured) surface morphologies is described. The technique is similar to that used in modeling of light trapping in solar cells and is also applicable to those cases when the wafer may have thin dielectric or metal layers. A software package is developed that uses this method. This package includes an approach for calculating the refractive index and absorption coefficient as a function of wavelength, for various temperatures and dopant concentrations. We present results for a number of cases to demonstrate the applications of this model.

KW - Absorption coefficient

KW - Emissivity

KW - Refractive index

KW - Silicon wafers

KW - Surface roughness

UR - https://www.scopus.com/pages/publications/0032297628

U2 - 10.1007/s11664-998-0094-3

DO - 10.1007/s11664-998-0094-3

M3 - Article

AN - SCOPUS:0032297628

SN - 0361-5235

VL - 27

SP - 1341

EP - 1346

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Modeling emissivity of rough and textured silicon wafers

Abstract

UN SDGs

Keywords

Access to Document

OpenUrl availability

Other files and links

Fingerprint

Cite this