Mission profile based sizing of IGBT chip area for PV inverter applications

Yanfeng Shen; Huai Wang; Yongheng Yang; Paula Diaz Reigosa; Frede Blaabjerg

doi:10.1109/PEDG.2016.7527028

Mission profile based sizing of IGBT chip area for PV inverter applications

Yanfeng Shen, Huai Wang, Yongheng Yang, Paula Diaz Reigosa, Frede Blaabjerg

Aalborg University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

22 Scopus citations

Abstract

Maximizing the total energy generation is of importance for Photovoltaic (PV) plants. This paper proposes a method to optimize the IGBT chip area for PV inverters to minimize the annual energy loss of the active switches based on long-term operation conditions (i.e., mission profile). The design process is firstly introduced. Then the power loss, thermal characteristic and lifetime for IGBT modules with different chip areas are modeled. After that, the dependence of the annual energy loss and maximum junction temperature on the IGBT chip area and switching frequency is derived under a specific yearly mission profile. Simulation results are given to verify the thermal characteristics. Furthermore, a Monte Carlo based lifetime evaluation is presented to check the IGBT reliability. The proposed design method enables a reliability-oriented energy optimized sizing of active switches for PV inverter applications, which otherwise cannot be achieved by taking into account the power efficiency at rated condition or the weighted power efficiency at several loading levels only.

Original language	British English
Title of host publication	2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467386166
DOIs	https://doi.org/10.1109/PEDG.2016.7527028
State	Published - 29 Jul 2016
Event	7th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016 - Vancouver, Canada Duration: 27 Jun 2016 → 30 Jun 2016

Publication series

Name	2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016

Conference

Conference	7th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016
Country/Territory	Canada
City	Vancouver
Period	27/06/16 → 30/06/16

Keywords

annual energy loss
IGBT sizing
inverter
reliability

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PEDG.2016.7527028

Cite this

Shen, Y., Wang, H., Yang, Y., Reigosa, P. D., & Blaabjerg, F. (2016). Mission profile based sizing of IGBT chip area for PV inverter applications. In 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016 Article 7527028 (2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDG.2016.7527028

Shen, Yanfeng ; Wang, Huai ; Yang, Yongheng et al. / Mission profile based sizing of IGBT chip area for PV inverter applications. 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016).

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title = "Mission profile based sizing of IGBT chip area for PV inverter applications",

abstract = "Maximizing the total energy generation is of importance for Photovoltaic (PV) plants. This paper proposes a method to optimize the IGBT chip area for PV inverters to minimize the annual energy loss of the active switches based on long-term operation conditions (i.e., mission profile). The design process is firstly introduced. Then the power loss, thermal characteristic and lifetime for IGBT modules with different chip areas are modeled. After that, the dependence of the annual energy loss and maximum junction temperature on the IGBT chip area and switching frequency is derived under a specific yearly mission profile. Simulation results are given to verify the thermal characteristics. Furthermore, a Monte Carlo based lifetime evaluation is presented to check the IGBT reliability. The proposed design method enables a reliability-oriented energy optimized sizing of active switches for PV inverter applications, which otherwise cannot be achieved by taking into account the power efficiency at rated condition or the weighted power efficiency at several loading levels only.",

keywords = "annual energy loss, IGBT sizing, inverter, reliability",

author = "Yanfeng Shen and Huai Wang and Yongheng Yang and Reigosa, {Paula Diaz} and Frede Blaabjerg",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 7th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016 ; Conference date: 27-06-2016 Through 30-06-2016",

year = "2016",

month = jul,

day = "29",

doi = "10.1109/PEDG.2016.7527028",

language = "British English",

series = "2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016",

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}

Shen, Y, Wang, H, Yang, Y, Reigosa, PD & Blaabjerg, F 2016, Mission profile based sizing of IGBT chip area for PV inverter applications. in 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016., 7527028, 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016, Institute of Electrical and Electronics Engineers Inc., 7th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016, Vancouver, Canada, 27/06/16. https://doi.org/10.1109/PEDG.2016.7527028

Mission profile based sizing of IGBT chip area for PV inverter applications. / Shen, Yanfeng; Wang, Huai; Yang, Yongheng et al.
2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7527028 (2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mission profile based sizing of IGBT chip area for PV inverter applications

AU - Shen, Yanfeng

AU - Wang, Huai

AU - Yang, Yongheng

AU - Reigosa, Paula Diaz

AU - Blaabjerg, Frede

PY - 2016/7/29

Y1 - 2016/7/29

N2 - Maximizing the total energy generation is of importance for Photovoltaic (PV) plants. This paper proposes a method to optimize the IGBT chip area for PV inverters to minimize the annual energy loss of the active switches based on long-term operation conditions (i.e., mission profile). The design process is firstly introduced. Then the power loss, thermal characteristic and lifetime for IGBT modules with different chip areas are modeled. After that, the dependence of the annual energy loss and maximum junction temperature on the IGBT chip area and switching frequency is derived under a specific yearly mission profile. Simulation results are given to verify the thermal characteristics. Furthermore, a Monte Carlo based lifetime evaluation is presented to check the IGBT reliability. The proposed design method enables a reliability-oriented energy optimized sizing of active switches for PV inverter applications, which otherwise cannot be achieved by taking into account the power efficiency at rated condition or the weighted power efficiency at several loading levels only.

AB - Maximizing the total energy generation is of importance for Photovoltaic (PV) plants. This paper proposes a method to optimize the IGBT chip area for PV inverters to minimize the annual energy loss of the active switches based on long-term operation conditions (i.e., mission profile). The design process is firstly introduced. Then the power loss, thermal characteristic and lifetime for IGBT modules with different chip areas are modeled. After that, the dependence of the annual energy loss and maximum junction temperature on the IGBT chip area and switching frequency is derived under a specific yearly mission profile. Simulation results are given to verify the thermal characteristics. Furthermore, a Monte Carlo based lifetime evaluation is presented to check the IGBT reliability. The proposed design method enables a reliability-oriented energy optimized sizing of active switches for PV inverter applications, which otherwise cannot be achieved by taking into account the power efficiency at rated condition or the weighted power efficiency at several loading levels only.

KW - annual energy loss

KW - IGBT sizing

KW - inverter

KW - reliability

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DO - 10.1109/PEDG.2016.7527028

M3 - Conference contribution

AN - SCOPUS:84994247073

T3 - 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016

BT - 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016

Y2 - 27 June 2016 through 30 June 2016

ER -

Shen Y, Wang H, Yang Y, Reigosa PD, Blaabjerg F. Mission profile based sizing of IGBT chip area for PV inverter applications. In 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7527028. (2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2016). doi: 10.1109/PEDG.2016.7527028

Mission profile based sizing of IGBT chip area for PV inverter applications

Abstract

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Keywords

UN SDGs

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