Mid infrared luminescence of dilute nitride semiconductors: Microscopic approach vs experiments

C. I. Oriaku, M. F. Pereira

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, analytical expressions for optical nonlinearities are applied in the simulations of the absorption and photoluminescence of mid infrared materials. The fast and efficient approximations reproduce recent experimental data for dilute nitride semiconductors with very good agreement.

Original languageBritish English
Title of host publicationTerahertz Emitters, Receivers, and Applications V
EditorsAlexei N. Baranov, John M. Zavada, Dimitris Pavlidis, Manijeh Razeghi
PublisherSPIE
ISBN (Electronic)9781628412260
DOIs
StatePublished - 2014
EventTerahertz Emitters, Receivers, and Applications V - San Diego, United States
Duration: 17 Aug 201418 Aug 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9199
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceTerahertz Emitters, Receivers, and Applications V
Country/TerritoryUnited States
CitySan Diego
Period17/08/1418/08/14

Keywords

  • Absorption
  • Band anticrossing
  • Dilute nitrides
  • Gain
  • Many body effects
  • Mid Infrared
  • Photoluminescence

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