Metal-CH3NH3PbI3-metal tunnel FET

Kalpana Agrawal; Vinay Gupta; Ritu Srivastava; S. S. Rajput

doi:10.1109/TED.2018.2813522

Metal-CH₃NH₃PbI₃-metal tunnel FET

Kalpana Agrawal, Vinay Gupta, Ritu Srivastava, S. S. Rajput

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A novel-gated structure of aluminum (Al) - perovskite (CH₃NH₃PbI₃) - indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH₃NH₃PbI₃ has been explored for the device channel. Two Schottky junctions are present at source-channel and channel-drain junctions with barriers of 0.4 and 0.6 eV, respectively. Both, n- and p-type FET-like characteristics have been observed, when the device was biased, accordingly. The triangular tunneling has been observed in the output and transfer characteristics. The device shows a higher current on-off ratio ( ${I}{ \mathrm{\scriptscriptstyle ON}}/{ \mathrm{\scriptscriptstyle OFF}})$ of 10⁶ with a steeper and improved sub-threshold swing (SS) of 20 ± 2 mV/decade for P tunnel field-effect transistor (TFET). However, for N TFET, ${I}{\mathrm{\scriptscriptstyle ON}}/{\mathrm{\scriptscriptstyle OFF}}$ of 10⁴ with SS of 30 ± 2 mV/decade has been obtained.

Original language	British English
Pages (from-to)	1902-1909
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	5
DOIs	https://doi.org/10.1109/TED.2018.2813522
State	Published - May 2018

Keywords

Band diagram
Barrier
CHNHPbI
Metal to band (MTB) tunneling
Tunnel field-effect transistor (TFET)

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10.1109/TED.2018.2813522

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title = "Metal-CH3NH3PbI3-metal tunnel FET",

abstract = "A novel-gated structure of aluminum (Al) - perovskite (CH3NH3PbI3) - indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH3NH3PbI3 has been explored for the device channel. Two Schottky junctions are present at source-channel and channel-drain junctions with barriers of 0.4 and 0.6 eV, respectively. Both, n- and p-type FET-like characteristics have been observed, when the device was biased, accordingly. The triangular tunneling has been observed in the output and transfer characteristics. The device shows a higher current on-off ratio ( ${I}{ \mathrm{\scriptscriptstyle ON}}/{ \mathrm{\scriptscriptstyle OFF}})$ of 106 with a steeper and improved sub-threshold swing (SS) of 20 ± 2 mV/decade for P tunnel field-effect transistor (TFET). However, for N TFET, ${I}{\mathrm{\scriptscriptstyle ON}}/{\mathrm{\scriptscriptstyle OFF}}$ of 104 with SS of 30 ± 2 mV/decade has been obtained.",

keywords = "Band diagram, Barrier, CHNHPbI, Metal to band (MTB) tunneling, Tunnel field-effect transistor (TFET)",

author = "Kalpana Agrawal and Vinay Gupta and Ritu Srivastava and Rajput, {S. S.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

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doi = "10.1109/TED.2018.2813522",

language = "British English",

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TY - JOUR

T1 - Metal-CH3NH3PbI3-metal tunnel FET

AU - Agrawal, Kalpana

AU - Gupta, Vinay

AU - Srivastava, Ritu

AU - Rajput, S. S.

PY - 2018/5

Y1 - 2018/5

N2 - A novel-gated structure of aluminum (Al) - perovskite (CH3NH3PbI3) - indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH3NH3PbI3 has been explored for the device channel. Two Schottky junctions are present at source-channel and channel-drain junctions with barriers of 0.4 and 0.6 eV, respectively. Both, n- and p-type FET-like characteristics have been observed, when the device was biased, accordingly. The triangular tunneling has been observed in the output and transfer characteristics. The device shows a higher current on-off ratio ( ${I}{ \mathrm{\scriptscriptstyle ON}}/{ \mathrm{\scriptscriptstyle OFF}})$ of 106 with a steeper and improved sub-threshold swing (SS) of 20 ± 2 mV/decade for P tunnel field-effect transistor (TFET). However, for N TFET, ${I}{\mathrm{\scriptscriptstyle ON}}/{\mathrm{\scriptscriptstyle OFF}}$ of 104 with SS of 30 ± 2 mV/decade has been obtained.

AB - A novel-gated structure of aluminum (Al) - perovskite (CH3NH3PbI3) - indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH3NH3PbI3 has been explored for the device channel. Two Schottky junctions are present at source-channel and channel-drain junctions with barriers of 0.4 and 0.6 eV, respectively. Both, n- and p-type FET-like characteristics have been observed, when the device was biased, accordingly. The triangular tunneling has been observed in the output and transfer characteristics. The device shows a higher current on-off ratio ( ${I}{ \mathrm{\scriptscriptstyle ON}}/{ \mathrm{\scriptscriptstyle OFF}})$ of 106 with a steeper and improved sub-threshold swing (SS) of 20 ± 2 mV/decade for P tunnel field-effect transistor (TFET). However, for N TFET, ${I}{\mathrm{\scriptscriptstyle ON}}/{\mathrm{\scriptscriptstyle OFF}}$ of 104 with SS of 30 ± 2 mV/decade has been obtained.

KW - Band diagram

KW - Barrier

KW - CHNHPbI

KW - Metal to band (MTB) tunneling

KW - Tunnel field-effect transistor (TFET)

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U2 - 10.1109/TED.2018.2813522

DO - 10.1109/TED.2018.2813522

M3 - Article

AN - SCOPUS:85045188876

SN - 0018-9383

VL - 65

SP - 1902

EP - 1909

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Metal-CH₃NH₃PbI₃-metal tunnel FET

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Keywords

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