TY - JOUR
T1 - MemSens
T2 - Memristor-Based Radiation Sensor
AU - Abunahla, Heba
AU - Mohammad, Baker
AU - Mahmoud, Lama
AU - Darweesh, Muna
AU - Alhawari, Mohammad
AU - Jaoude, Maguy Abi
AU - Hitt, George Wesley
N1 - Funding Information:
Manuscript received January 27, 2018; accepted February 13, 2018. Date of publication February 20, 2018; date of current version March 22, 2018. This work was supported by ADEK Award for Research Excellence (AARE-2015) under Grant 3109. The associate editor coordinating the review of this paper and approving it for publication was Dr. Richard T. Kouzes. (Corresponding author: Heba Abunahla.) H. Abunahla, B. Mohammad, and M. Alhawari are with the Department of Electrical and Computer Engineering, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates (e-mail: [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 2001-2012 IEEE.
PY - 2018/4/15
Y1 - 2018/4/15
N2 - Resistive random-access memory (RRAM) technology has been gaining importance due to scalability, low power, non-volatility, and the ability to perform in-memory computing. The RRAM sensing applications have also emerged to enable single RRAM technology platforms which include sensing, data storage, and computing. This paper reports on sol-gel drop coated low-power μ -thick Ag/TiO2/Cu memristor, named MemSens, developed for radiation sensing. MemSens exhibits a bipolar memristive switching behavior within a small voltage window, ranging up to +0.7 V for the turn-ON, and down to -0.2 V for the turn-OFF. Under these operating conditions, MemSens has 67% less switching voltage, 20% drop in ON switching current, 75% reduced active area and > 3x improved device endurance, compared to the best characteristics reported in the literature for μ -thick memristors. The device is tested under direct exposure to ionizing Cs-137 662keV γ -rays, during which a significant increase in the electrical conductivity of the device is observed. MemSens circuit is proposed to allow a relatively real time and cost-effective radiation detection. This provides a first insight to the advancement of reliable memristors that could potentially be deployed in future low-power radiation sensing technologies for medical, personal protection, and other field applications.
AB - Resistive random-access memory (RRAM) technology has been gaining importance due to scalability, low power, non-volatility, and the ability to perform in-memory computing. The RRAM sensing applications have also emerged to enable single RRAM technology platforms which include sensing, data storage, and computing. This paper reports on sol-gel drop coated low-power μ -thick Ag/TiO2/Cu memristor, named MemSens, developed for radiation sensing. MemSens exhibits a bipolar memristive switching behavior within a small voltage window, ranging up to +0.7 V for the turn-ON, and down to -0.2 V for the turn-OFF. Under these operating conditions, MemSens has 67% less switching voltage, 20% drop in ON switching current, 75% reduced active area and > 3x improved device endurance, compared to the best characteristics reported in the literature for μ -thick memristors. The device is tested under direct exposure to ionizing Cs-137 662keV γ -rays, during which a significant increase in the electrical conductivity of the device is observed. MemSens circuit is proposed to allow a relatively real time and cost-effective radiation detection. This provides a first insight to the advancement of reliable memristors that could potentially be deployed in future low-power radiation sensing technologies for medical, personal protection, and other field applications.
KW - active
KW - bipolar
KW - crossbar
KW - endurance
KW - Low power
KW - radiation
KW - sol-gel
UR - https://www.scopus.com/pages/publications/85042352197
U2 - 10.1109/JSEN.2018.2808285
DO - 10.1109/JSEN.2018.2808285
M3 - Article
AN - SCOPUS:85042352197
SN - 1530-437X
VL - 18
SP - 3198
EP - 3205
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 8
ER -