Memristor: Modeling read and write operations

Dirar Homouz, Baker Mohammad, Hazem Elgabra, Ilyas Farahat

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

The realization of the missing forth element by HP in 2008, the memristor, which was theorized by Leon Chau in 1971, adds new promising technology that enables the continuing improvement of performance, power and cost of integrated circuits and keeping Moore's law alive. Memristor-based technology provides much better scalability, higher utilization when used as memory, and overall lower power consumption. The goal of this paper is to study the read and write behavior of memristors using mathematical and SPICE simulations. This modeling will help us understand the behavior and the stability of the memristor state especially under the repeated read process. We show in this study that reading a memristor by a decaying voltage can balance the tradeoff between stable reading and fast writing

Original languageBritish English
Title of host publication2011 International Conference on Microelectronics, ICM 2011
DOIs
StatePublished - 2011
Event2011 23rd International Conference on Microelectronics, ICM 2011 - Hammamet, Tunisia
Duration: 19 Dec 201122 Dec 2011

Publication series

NameProceedings of the International Conference on Microelectronics, ICM

Conference

Conference2011 23rd International Conference on Microelectronics, ICM 2011
Country/TerritoryTunisia
CityHammamet
Period19/12/1122/12/11

Keywords

  • Memristor
  • nano-device modeling
  • nanotechnology
  • Nonvolatile memory
  • Resistive RAM

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