Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers

Sobia Ali Khan, Fayyaz Hussain, Daewon Chung, Mehr Khalid Rahmani, Muhammd Ismail, Chandreswar Mahata, Yawar Abbas, Haider Abbas, Changhwan Choi, Alexey N. Mikhaylov, Sergey A. Shchanikov, Byung Do Yang, Sungjun Kim

    Research output: Contribution to journalArticlepeer-review


    In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.

    Original languageBritish English
    Article number1498
    Issue number9
    StatePublished - Sep 2022


    • boron nitride
    • resistive switching
    • self-rectification
    • silicon nitride


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