Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model

Yasmin Halawani; Baker Mohammad; Mahmoud Al-Qutayri; Hani Saleh

doi:10.1109/ISCAS.2015.7168922

Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model

Yasmin Halawani, Baker Mohammad, Mahmoud Al-Qutayri, Hani Saleh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

The increase in demand for higher functionality, smaller size, lower cost and near perpetual operation of Wireless Sensor Nodes (WSNs) are posing big challenges for system designers. A major aspect is the operational lifetime of the system which is determined by the finite energy source supplied by the battery. In WSNs, the higher power incurred due to added system functionality and the increase leakage as a result of technology scaling have high impact on the battery lifetime. In this work, memory was used to further exploit the energy efficiency at the sensor node system-level. A detailed analysis using Semi-Markov model to investigate different operational modes of WSN with the present SRAM shows an improvement of 4x at 90% duty cycle in the node's lifetime. In addition, an emerging non-volatile memory (NVM) technology, Memristor, is also explored to further improve the WSN energy efficiency. Its non-volatility nature will suppress the power wasted as leakage in SRAM during idle periods which is typical for low duty-cycle WSNs. The results show that utilizing an on-chip NVM can further improve WSN lifetime by 1x for low activity μW range sensor nodes.

Original language	British English
Title of host publication	2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1470-1473
Number of pages	4
ISBN (Electronic)	9781479983919
DOIs	https://doi.org/10.1109/ISCAS.2015.7168922
State	Published - 27 Jul 2015
Event	IEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal Duration: 24 May 2015 → 27 May 2015

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	2015-July
ISSN (Print)	0271-4310

Conference

Conference	IEEE International Symposium on Circuits and Systems, ISCAS 2015
Country/Territory	Portugal
City	Lisbon
Period	24/05/15 → 27/05/15

Keywords

local data storage
low-power
Memory
Semi-Markov
wireless sensor node

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISCAS.2015.7168922

Cite this

Halawani, Y., Mohammad, B., Al-Qutayri, M., & Saleh, H. (2015). Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015 (pp. 1470-1473). Article 7168922 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2015-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2015.7168922

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title = "Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model",

abstract = "The increase in demand for higher functionality, smaller size, lower cost and near perpetual operation of Wireless Sensor Nodes (WSNs) are posing big challenges for system designers. A major aspect is the operational lifetime of the system which is determined by the finite energy source supplied by the battery. In WSNs, the higher power incurred due to added system functionality and the increase leakage as a result of technology scaling have high impact on the battery lifetime. In this work, memory was used to further exploit the energy efficiency at the sensor node system-level. A detailed analysis using Semi-Markov model to investigate different operational modes of WSN with the present SRAM shows an improvement of 4x at 90% duty cycle in the node's lifetime. In addition, an emerging non-volatile memory (NVM) technology, Memristor, is also explored to further improve the WSN energy efficiency. Its non-volatility nature will suppress the power wasted as leakage in SRAM during idle periods which is typical for low duty-cycle WSNs. The results show that utilizing an on-chip NVM can further improve WSN lifetime by 1x for low activity μW range sensor nodes.",

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Halawani, Y, Mohammad, B , Al-Qutayri, M & Saleh, H 2015, Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model. in 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015., 7168922, Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2015-July, Institute of Electrical and Electronics Engineers Inc., pp. 1470-1473, IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, 24/05/15. https://doi.org/10.1109/ISCAS.2015.7168922

Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model. / Halawani, Yasmin; Mohammad, Baker ; Al-Qutayri, Mahmoud et al.
2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1470-1473 7168922 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The increase in demand for higher functionality, smaller size, lower cost and near perpetual operation of Wireless Sensor Nodes (WSNs) are posing big challenges for system designers. A major aspect is the operational lifetime of the system which is determined by the finite energy source supplied by the battery. In WSNs, the higher power incurred due to added system functionality and the increase leakage as a result of technology scaling have high impact on the battery lifetime. In this work, memory was used to further exploit the energy efficiency at the sensor node system-level. A detailed analysis using Semi-Markov model to investigate different operational modes of WSN with the present SRAM shows an improvement of 4x at 90% duty cycle in the node's lifetime. In addition, an emerging non-volatile memory (NVM) technology, Memristor, is also explored to further improve the WSN energy efficiency. Its non-volatility nature will suppress the power wasted as leakage in SRAM during idle periods which is typical for low duty-cycle WSNs. The results show that utilizing an on-chip NVM can further improve WSN lifetime by 1x for low activity μW range sensor nodes.

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Halawani Y, Mohammad B , Al-Qutayri M , Saleh H. Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1470-1473. 7168922. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS.2015.7168922

Memory impact on the lifetime of a Wireless Sensor Node using a Semi-Markov model

Abstract

Publication series

Conference

Keywords

UN SDGs

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