Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al2O3–SiO2structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802)

Nazek El-Atab; Ayman Rizk; Burak Tekcan; Sabri Alkis; Ali K. Okyay; Ammar Nayfeh

doi:10.1002/pssa.201600455

Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al₂O₃–SiO₂structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802)

Nazek El-Atab
, Ayman Rizk
, Burak Tekcan
, Sabri Alkis
, Ali K. Okyay
, Ammar Nayfeh

Electrical Engineering

Bilkent University

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Abstract

The authors would like to make an addition to the caption of Fig. 1, notifying partly reused material from another journal. We would like to add the following in the caption of Fig. 1: Partly reused from N. El-Atab et al., Appl. Phys. Lett. 104, 013112 (2014) [4].

Original language	British English
Pages (from-to)	2264
Number of pages	1
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	213
Issue number	8
DOIs	https://doi.org/10.1002/pssa.201600455
State	Published - 1 Aug 2016

Keywords

atomic layer deposition
charge trapping memory
laser processing
metal–oxide–semiconductor structures
nanoparticles
silicon

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El-Atab, N., Rizk, A., Tekcan, B., Alkis, S., Okyay, A. K., & Nayfeh, A. (2016). Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al₂O₃–SiO₂structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802). Physica Status Solidi (A) Applications and Materials Science, 213(8), 2264. https://doi.org/10.1002/pssa.201600455

El-Atab, Nazek ; Rizk, Ayman ; Tekcan, Burak et al. / Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al₂O₃–SiO₂structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802). In: Physica Status Solidi (A) Applications and Materials Science. 2016 ; Vol. 213, No. 8. pp. 2264.

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title = "Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al2O3–SiO2structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802)",

abstract = "The authors would like to make an addition to the caption of Fig. 1, notifying partly reused material from another journal. We would like to add the following in the caption of Fig. 1: Partly reused from N. El-Atab et al., Appl. Phys. Lett. 104, 013112 (2014) [4].",

keywords = "atomic layer deposition, charge trapping memory, laser processing, metal–oxide–semiconductor structures, nanoparticles, silicon",

author = "Nazek El-Atab and Ayman Rizk and Burak Tekcan and Sabri Alkis and Okyay, \{Ali K.\} and Ammar Nayfeh",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

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El-Atab, N, Rizk, A, Tekcan, B, Alkis, S, Okyay, AK & Nayfeh, A 2016, 'Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al₂O₃–SiO₂structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802)', Physica Status Solidi (A) Applications and Materials Science, vol. 213, no. 8, pp. 2264. https://doi.org/10.1002/pssa.201600455

Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al₂O₃–SiO₂structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802). / El-Atab, Nazek; Rizk, Ayman; Tekcan, Burak et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 213, No. 8, 01.08.2016, p. 2264.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al2O3–SiO2structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802)

AU - El-Atab, Nazek

AU - Rizk, Ayman

AU - Tekcan, Burak

AU - Alkis, Sabri

AU - Okyay, Ali K.

AU - Nayfeh, Ammar

PY - 2016/8/1

Y1 - 2016/8/1

N2 - The authors would like to make an addition to the caption of Fig. 1, notifying partly reused material from another journal. We would like to add the following in the caption of Fig. 1: Partly reused from N. El-Atab et al., Appl. Phys. Lett. 104, 013112 (2014) [4].

AB - The authors would like to make an addition to the caption of Fig. 1, notifying partly reused material from another journal. We would like to add the following in the caption of Fig. 1: Partly reused from N. El-Atab et al., Appl. Phys. Lett. 104, 013112 (2014) [4].

KW - atomic layer deposition

KW - charge trapping memory

KW - laser processing

KW - metal–oxide–semiconductor structures

KW - nanoparticles

KW - silicon

UR - https://www.scopus.com/pages/publications/84981502028

U2 - 10.1002/pssa.201600455

DO - 10.1002/pssa.201600455

M3 - Comment/debate

AN - SCOPUS:84981502028

SN - 1862-6300

VL - 213

SP - 2264

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 8

ER -

El-Atab N, Rizk A, Tekcan B, Alkis S, Okyay AK, Nayfeh A. Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si–Al₂O₃–SiO₂structure [Phys. Status Solidi A 212, 1751–1755 (2015)] (Appl. Phys. Lett., (2014), 104, (13112), 10.1002/pssa.201431802). Physica Status Solidi (A) Applications and Materials Science. 2016 Aug 1;213(8):2264. doi: 10.1002/pssa.201600455