Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

F. Foulon; E. Fogarassy; A. Slaoui; C. Fuchs; S. Unamuno; P. Siffert

doi:10.1007/BF00617943

Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

F. Foulon, E. Fogarassy, A. Slaoui, C. Fuchs, S. Unamuno, P. Siffert

Centre de Recherches Nucleaires (IN2P3)

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40 Scopus citations

Abstract

Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.

Original language	British English
Pages (from-to)	361-364
Number of pages	4
Journal	Applied Physics A Solids and Surfaces
Volume	45
Issue number	4
DOIs	https://doi.org/10.1007/BF00617943
State	Published - Apr 1988

Keywords

68.15
68.55
78.65

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abstract = "Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.",

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AU - Foulon, F.

AU - Fogarassy, E.

AU - Slaoui, A.

AU - Fuchs, C.

AU - Unamuno, S.

AU - Siffert, P.

PY - 1988/4

Y1 - 1988/4

N2 - Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.

AB - Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.

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ER -

Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

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