TY - JOUR
T1 - Measurement and ab initio Investigation of Structural, Electronic, Optical, and Mechanical Properties of Sputtered Aluminum Nitride Thin Films
AU - Alsaad, A. M.
AU - Al-Bataineh, Qais M.
AU - Qattan, I. A.
AU - Ahmad, Ahmad A.
AU - Ababneh, A.
AU - Albataineh, Zaid
AU - Aljarrah, Ihsan A.
AU - Telfah, Ahmad
N1 - Funding Information:
The authors would like to thank Jordan University of Science and Technology for the financial and the technical support provided by the deanship of scientific research. The second author would like to acknowledge the technical support provided by Holland Computing Centre affiliated to University of Nebraska at Omaha (UNO), United States. We would like to acknowledge the support of Khalifa University of Science and Technology, Abu Dhabi, United Arab Emirates.
Publisher Copyright:
© Copyright © 2020 Alsaad, Al-Bataineh, Qattan, Ahmad, Ababneh, Albataineh, Aljarrah and Telfah.
PY - 2020/5/5
Y1 - 2020/5/5
N2 - We report our results on highly textured aluminum nitride (AlN) thin films deposited on glass substrates, oriented along the c-axis, using DC-magnetron sputtering technique for different values of back pressure. The structural, electronic, optical, piezoelectric, dielectric, and elastic properties of sputtered AlN thin films are measured and characterized. In particular, X-ray powder diffraction (XRD) technique shows that AlN thin films exhibit a hexagonal structure. Moreover, we employed ab initio simulations of AlN using the Vienna Ab Initio Simulation Package (VASP) to investigate the structural and the electronic properties of hexagonal AlN structures. The experimental lattice parameters of the as-prepared thin films agree well with those calculated using the total energy minimization approach. The optical parameters of AlN thin films, such as transmittance and refractive index, were measured using UV–vis measurements. Our measurements of refractive index, n, of AlN thin films yield a value of 2.2. Furthermore, the elastic, piezoelectric, and dielectric tensors of AlN crystal are calculated using VASP. The dynamical Born effective charge tensor is reported for all atoms in the unit cell of AlN. Interestingly, ab initio simulations indicate that AlN has a static dielectric constant approximately equal to 4.68, which is in good agreement with the reported experimental value. In addition, the clamped-ion piezoelectric tensor is calculated. The diagonal components of the piezoelectric tensor are found to be (Formula presented.) and (Formula presented.). The large values of the piezoelectric coefficients show that a polar AlN crystal exhibits a strong microwave piezoelectric effect. Additionally, the components of the elastic moduli tensor are calculated. The extraordinary electronic, optical, piezoelectric, and elastic properties make AlN thin films potential candidates for several optoelectronic, elastic, dielectric, and piezoelectric applications.
AB - We report our results on highly textured aluminum nitride (AlN) thin films deposited on glass substrates, oriented along the c-axis, using DC-magnetron sputtering technique for different values of back pressure. The structural, electronic, optical, piezoelectric, dielectric, and elastic properties of sputtered AlN thin films are measured and characterized. In particular, X-ray powder diffraction (XRD) technique shows that AlN thin films exhibit a hexagonal structure. Moreover, we employed ab initio simulations of AlN using the Vienna Ab Initio Simulation Package (VASP) to investigate the structural and the electronic properties of hexagonal AlN structures. The experimental lattice parameters of the as-prepared thin films agree well with those calculated using the total energy minimization approach. The optical parameters of AlN thin films, such as transmittance and refractive index, were measured using UV–vis measurements. Our measurements of refractive index, n, of AlN thin films yield a value of 2.2. Furthermore, the elastic, piezoelectric, and dielectric tensors of AlN crystal are calculated using VASP. The dynamical Born effective charge tensor is reported for all atoms in the unit cell of AlN. Interestingly, ab initio simulations indicate that AlN has a static dielectric constant approximately equal to 4.68, which is in good agreement with the reported experimental value. In addition, the clamped-ion piezoelectric tensor is calculated. The diagonal components of the piezoelectric tensor are found to be (Formula presented.) and (Formula presented.). The large values of the piezoelectric coefficients show that a polar AlN crystal exhibits a strong microwave piezoelectric effect. Additionally, the components of the elastic moduli tensor are calculated. The extraordinary electronic, optical, piezoelectric, and elastic properties make AlN thin films potential candidates for several optoelectronic, elastic, dielectric, and piezoelectric applications.
KW - AlN thin films
KW - DC-magnetron sputtering technique
KW - electronic
KW - hybrid functional HSE06
KW - mechanical
KW - optical
KW - physical tensors
KW - UV–vis measurements
UR - http://www.scopus.com/inward/record.url?scp=85085151765&partnerID=8YFLogxK
U2 - 10.3389/fphy.2020.00115
DO - 10.3389/fphy.2020.00115
M3 - Article
AN - SCOPUS:85085151765
SN - 2296-424X
VL - 8
JO - Frontiers in Physics
JF - Frontiers in Physics
M1 - 115
ER -