@inproceedings{2b3bdf2384b544b783424083333ea768,
title = "Mathematical modeling of a memristor device",
abstract = "The realization of the missing fourth element by Hewlett-Packard in 2008, the memristor, adds new promising technology that enables the continuing improvement of performance, power and cost of integrated circuits and keeping Moore's law alive. Memristor-based technology provides much better scalability, higher utilization when used as memory, and overall lower power consumption. This paper presents a detailed study of existing memristor modeling using Matlab simulations. We studied three different models to predict the behavior of the memristor device. We developed the Matlab algorithms for all models and analyzed them for their compatibility with the experimentally established characteristics of HP memristor, as well as their viability for use in memory circuits. We discussed all the difficulties with these models and adopt a modified model that gives more realistic description of a memristor device.",
keywords = "device modeling, memory, Memristor, RRAM",
author = "Hazem Elgabra and Farhat, {Ilyas A.H.} and {Al Hosani}, {Ahmed S.} and Dirar Homouz and Baker Mohammad",
year = "2012",
doi = "10.1109/INNOVATIONS.2012.6207722",
language = "British English",
isbn = "9781467311014",
series = "2012 International Conference on Innovations in Information Technology, IIT 2012",
pages = "156--161",
booktitle = "2012 International Conference on Innovations in Information Technology, IIT 2012",
note = "2012 International Conference on Innovations in Information Technology, IIT 2012 ; Conference date: 18-03-2012 Through 20-03-2012",
}