Mathematical modeling of a memristor device

Hazem Elgabra, Ilyas A.H. Farhat, Ahmed S. Al Hosani, Dirar Homouz, Baker Mohammad

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

25 Scopus citations

Abstract

The realization of the missing fourth element by Hewlett-Packard in 2008, the memristor, adds new promising technology that enables the continuing improvement of performance, power and cost of integrated circuits and keeping Moore's law alive. Memristor-based technology provides much better scalability, higher utilization when used as memory, and overall lower power consumption. This paper presents a detailed study of existing memristor modeling using Matlab simulations. We studied three different models to predict the behavior of the memristor device. We developed the Matlab algorithms for all models and analyzed them for their compatibility with the experimentally established characteristics of HP memristor, as well as their viability for use in memory circuits. We discussed all the difficulties with these models and adopt a modified model that gives more realistic description of a memristor device.

Original languageBritish English
Title of host publication2012 International Conference on Innovations in Information Technology, IIT 2012
Pages156-161
Number of pages6
DOIs
StatePublished - 2012
Event2012 International Conference on Innovations in Information Technology, IIT 2012 - Abu Dhabi, Al-Ain, United Arab Emirates
Duration: 18 Mar 201220 Mar 2012

Publication series

Name2012 International Conference on Innovations in Information Technology, IIT 2012

Conference

Conference2012 International Conference on Innovations in Information Technology, IIT 2012
Country/TerritoryUnited Arab Emirates
CityAbu Dhabi, Al-Ain
Period18/03/1220/03/12

Keywords

  • device modeling
  • memory
  • Memristor
  • RRAM

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