Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

L. X. Zheng, H. Yang, D. P. Xu, X. J. Wang, X. F. Li, J. B. Li, Y. T. Wang, L. H. Duan, X. W. Hu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Low-temperature growth of cubic GaN at 520°C was achieved using CCl4 as an additive by metalorganic chemical-vapor deposition (MOCVD) on GaAs substrate. X-Ray measurement confirmed that the films are single-phase cubic GaN. Scanning electron microscopy (SEM) and reflection high-energy electron diffraction (RHEED) were also used to analyze the surface morphology and the quality of films. The evolution of surface morphology suggests that CCl4 can reduce the hopping barrier and thus Ga adatoms are able to diffuse easily on the GaN surface.

Original languageBritish English
Pages (from-to)251-255
Number of pages5
JournalThin Solid Films
Issue number1-2
StatePublished - 4 Aug 1998


  • Growth mechanism
  • Nitrides
  • Surface morphology


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