Abstract
The use of low temperature ALD grown ZnO as emitter and TCO coating for a-Si PIN solar cells is studied. Several cells are fabricated with 30nm ALD ZnO on top. The grown ALD ZnO without any additional TCO resulted in photovoltaic behavior. This confirms that the ZnO is acting as both an n-type semiconductor and TCO layer simultaneously. The measured open circuit voltage Voc = 0.25V and short-circuit current Jsc =1.63 mA/cm2 is achieved. In addition the EQE and IQE are measured and compared.
| Original language | British English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479979448 |
| DOIs | |
| State | Published - 14 Dec 2015 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Publication series
| Name | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
|---|
Conference
| Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Country/Territory | United States |
| City | New Orleans |
| Period | 14/06/15 → 19/06/15 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- amorphous materials
- atomic layer deposition
- photovoltaic cells
- silicon
- silicon carbide
- zinc oxide
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