Low temperature ALD grown ZnO as emitter and TCO for a thin-film a-Si PIN solar cells

Aaesha Alnuaimi, Burak Tekcan, Ali K. Okyay, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The use of low temperature ALD grown ZnO as emitter and TCO coating for a-Si PIN solar cells is studied. Several cells are fabricated with 30nm ALD ZnO on top. The grown ALD ZnO without any additional TCO resulted in photovoltaic behavior. This confirms that the ZnO is acting as both an n-type semiconductor and TCO layer simultaneously. The measured open circuit voltage Voc = 0.25V and short-circuit current Jsc =1.63 mA/cm2 is achieved. In addition the EQE and IQE are measured and compared.

Original languageBritish English
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period14/06/1519/06/15

Keywords

  • amorphous materials
  • atomic layer deposition
  • photovoltaic cells
  • silicon
  • silicon carbide
  • zinc oxide

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