Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes

Mengxing Chen; Tianyu Zhu; Donghua Pan; Huai Wang; Xiongfei Wang; Frede Blaabjerg

doi:10.1109/IPEMC-ECCEAsia48364.2020.9368044

Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes

Mengxing Chen, Tianyu Zhu, Donghua Pan, Huai Wang, Xiongfei Wang, Frede Blaabjerg

Aalborg University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this paper, the power losses of three-level active neutral-point-clamped (3L-ANPC) inverters fully utilizing silicon-carbide (SiC) MOSFETs are studied and compared under three typically modulation schemes (i.e., the outer mode, inner mode, and full mode). Double-pulse tests (DPTs) are performed on a 3L-ANPC inverter prototype to evaluate the switching losses of SiC MOSFETs. The overall conversion losses subject to the three modulation schemes are investigated considering device junction temperatures. Accordingly, loss distributions among SiC devices are obtained, and the devices subject to the most significant electro-thermal stresses are identified. A power-loss comparison exhibits a comparable loss performance between the outer-mode and inner-mode modulation methods, while the full-mode loss characteristic is quite dependent on its loading condition. Finally, the theoretical finding presented in this work are validated through experimental measurements of the conversion efficiencies.

Original language	British English
Title of host publication	2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	971-978
Number of pages	8
ISBN (Electronic)	9781728153018
DOIs	https://doi.org/10.1109/IPEMC-ECCEAsia48364.2020.9368044
State	Published - 29 Nov 2020
Event	9th IEEE International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia - Nanjing, China Duration: 29 Nov 2020 → 2 Dec 2020

Publication series

Name	2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia

Conference

Conference	9th IEEE International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia
Country/Territory	China
City	Nanjing
Period	29/11/20 → 2/12/20

Keywords

active neutral-point-clamped inverter
conversion loss
loss distribution
modulation scheme
SiC MOSFET

Access to Document

10.1109/IPEMC-ECCEAsia48364.2020.9368044

Cite this

Chen, M., Zhu, T., Pan, D., Wang, H., Wang, X., & Blaabjerg, F. (2020). Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes. In 2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia (pp. 971-978). Article 9368044 (2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPEMC-ECCEAsia48364.2020.9368044

Chen, Mengxing ; Zhu, Tianyu ; Pan, Donghua et al. / Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes. 2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 971-978 (2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia).

@inproceedings{6bf13a74d1d34ed198fb53855175eaad,

title = "Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes",

abstract = "In this paper, the power losses of three-level active neutral-point-clamped (3L-ANPC) inverters fully utilizing silicon-carbide (SiC) MOSFETs are studied and compared under three typically modulation schemes (i.e., the outer mode, inner mode, and full mode). Double-pulse tests (DPTs) are performed on a 3L-ANPC inverter prototype to evaluate the switching losses of SiC MOSFETs. The overall conversion losses subject to the three modulation schemes are investigated considering device junction temperatures. Accordingly, loss distributions among SiC devices are obtained, and the devices subject to the most significant electro-thermal stresses are identified. A power-loss comparison exhibits a comparable loss performance between the outer-mode and inner-mode modulation methods, while the full-mode loss characteristic is quite dependent on its loading condition. Finally, the theoretical finding presented in this work are validated through experimental measurements of the conversion efficiencies.",

keywords = "active neutral-point-clamped inverter, conversion loss, loss distribution, modulation scheme, SiC MOSFET",

author = "Mengxing Chen and Tianyu Zhu and Donghua Pan and Huai Wang and Xiongfei Wang and Frede Blaabjerg",

note = "Funding Information: This work is support by Innovation Fund Denmark under Grant 5185-00006B (HER-SiC). Publisher Copyright: {\textcopyright} 2020 IEEE.; 9th IEEE International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia ; Conference date: 29-11-2020 Through 02-12-2020",

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doi = "10.1109/IPEMC-ECCEAsia48364.2020.9368044",

language = "British English",

series = "2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia",

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Chen, M, Zhu, T, Pan, D, Wang, H, Wang, X & Blaabjerg, F 2020, Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes. in 2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia., 9368044, 2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia, Institute of Electrical and Electronics Engineers Inc., pp. 971-978, 9th IEEE International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia, Nanjing, China, 29/11/20. https://doi.org/10.1109/IPEMC-ECCEAsia48364.2020.9368044

Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes. / Chen, Mengxing; Zhu, Tianyu; Pan, Donghua et al.
2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia. Institute of Electrical and Electronics Engineers Inc., 2020. p. 971-978 9368044 (2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, Mengxing

AU - Zhu, Tianyu

AU - Pan, Donghua

AU - Wang, Huai

AU - Wang, Xiongfei

AU - Blaabjerg, Frede

PY - 2020/11/29

Y1 - 2020/11/29

N2 - In this paper, the power losses of three-level active neutral-point-clamped (3L-ANPC) inverters fully utilizing silicon-carbide (SiC) MOSFETs are studied and compared under three typically modulation schemes (i.e., the outer mode, inner mode, and full mode). Double-pulse tests (DPTs) are performed on a 3L-ANPC inverter prototype to evaluate the switching losses of SiC MOSFETs. The overall conversion losses subject to the three modulation schemes are investigated considering device junction temperatures. Accordingly, loss distributions among SiC devices are obtained, and the devices subject to the most significant electro-thermal stresses are identified. A power-loss comparison exhibits a comparable loss performance between the outer-mode and inner-mode modulation methods, while the full-mode loss characteristic is quite dependent on its loading condition. Finally, the theoretical finding presented in this work are validated through experimental measurements of the conversion efficiencies.

AB - In this paper, the power losses of three-level active neutral-point-clamped (3L-ANPC) inverters fully utilizing silicon-carbide (SiC) MOSFETs are studied and compared under three typically modulation schemes (i.e., the outer mode, inner mode, and full mode). Double-pulse tests (DPTs) are performed on a 3L-ANPC inverter prototype to evaluate the switching losses of SiC MOSFETs. The overall conversion losses subject to the three modulation schemes are investigated considering device junction temperatures. Accordingly, loss distributions among SiC devices are obtained, and the devices subject to the most significant electro-thermal stresses are identified. A power-loss comparison exhibits a comparable loss performance between the outer-mode and inner-mode modulation methods, while the full-mode loss characteristic is quite dependent on its loading condition. Finally, the theoretical finding presented in this work are validated through experimental measurements of the conversion efficiencies.

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PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 29 November 2020 through 2 December 2020

ER -

Chen M, Zhu T, Pan D, Wang H, Wang X, Blaabjerg F. Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes. In 2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia. Institute of Electrical and Electronics Engineers Inc. 2020. p. 971-978. 9368044. (2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia). doi: 10.1109/IPEMC-ECCEAsia48364.2020.9368044

Loss Analysis of SiC-based Three-Level Active Neutral-Point-Clamped Inverters under Different Modulation Schemes

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