Linearization and field detectivity in magnetic tunnel junction sensors connected in series incorporating 16 nm-thick NiFe free layers

Ricardo J. Janeiro; Luís Gameiro; António Lopes; Susana Cardoso; Ricardo Ferreira; Elvira Paz; Paulo P. Freitas

doi:10.1109/TMAG.2012.2202887

Linearization and field detectivity in magnetic tunnel junction sensors connected in series incorporating 16 nm-thick NiFe free layers

Ricardo J. Janeiro, Luís Gameiro, António Lopes, Susana Cardoso, Ricardo Ferreira, Elvira Paz, Paulo P. Freitas

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this work, arrays of MgO-based magnetic tunnel junction elements (5 × μm ³ connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions.

Original language	British English
Article number	6332762
Pages (from-to)	4111-4114
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	48
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2012.2202887
State	Published - 2012

Keywords

Detectivity
MgO magnetic tunnel junctions
MTJ series
Noise level
Sensitivity
Tunneling magnetoresistance sensors

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10.1109/TMAG.2012.2202887

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title = "Linearization and field detectivity in magnetic tunnel junction sensors connected in series incorporating 16 nm-thick NiFe free layers",

abstract = "In this work, arrays of MgO-based magnetic tunnel junction elements (5 × μm 3 connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions.",

keywords = "Detectivity, MgO magnetic tunnel junctions, MTJ series, Noise level, Sensitivity, Tunneling magnetoresistance sensors",

author = "Janeiro, {Ricardo J.} and Lu{\'i}s Gameiro and Ant{\'o}nio Lopes and Susana Cardoso and Ricardo Ferreira and Elvira Paz and Freitas, {Paulo P.}",

note = "Funding Information: This work was supported in part by FCT PTDC/CTM-NAN/ 110793/2009 and SUDOE-Train2 projects. INL acknowledges partial funding from the ON2 project from PO Norte. INESC-MN acknowledges FCT funding through the Institute of Nanoscience and Nanotechnology (IN) Associated Laboratory.",

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doi = "10.1109/TMAG.2012.2202887",

language = "British English",

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T1 - Linearization and field detectivity in magnetic tunnel junction sensors connected in series incorporating 16 nm-thick NiFe free layers

AU - Janeiro, Ricardo J.

AU - Gameiro, Luís

AU - Lopes, António

AU - Cardoso, Susana

AU - Ferreira, Ricardo

AU - Paz, Elvira

AU - Freitas, Paulo P.

N1 - Funding Information: This work was supported in part by FCT PTDC/CTM-NAN/ 110793/2009 and SUDOE-Train2 projects. INL acknowledges partial funding from the ON2 project from PO Norte. INESC-MN acknowledges FCT funding through the Institute of Nanoscience and Nanotechnology (IN) Associated Laboratory.

PY - 2012

Y1 - 2012

N2 - In this work, arrays of MgO-based magnetic tunnel junction elements (5 × μm 3 connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions.

AB - In this work, arrays of MgO-based magnetic tunnel junction elements (5 × μm 3 connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions.

KW - Detectivity

KW - MgO magnetic tunnel junctions

KW - MTJ series

KW - Noise level

KW - Sensitivity

KW - Tunneling magnetoresistance sensors

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JF - IEEE Transactions on Magnetics

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ER -

Linearization and field detectivity in magnetic tunnel junction sensors connected in series incorporating 16 nm-thick NiFe free layers

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