Lateral and vertical ordered one-dimensional InGaAs/GaAs quantum structures

Zhixun Ma, Todd Holden, Zhiming M. Wang, Gregory J. Salamo, Peter Y. Yu, Samuel S. Mao

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Lateral and vertical ordered one-dimensional quantum structures, i.e. InGaAs/GaAs(001) quantum dot chains and quantum wires, have been obtained using molecular beam epitaxy. It was found that the InGaAs wires or dot chains sit on two-dimensional wetting layers and run along the [-110] direction, as the result of anisotropic strain and in-plane adatom diffusion. This anisotropic nature produces a model system for studying the electronic properties of one-, two-, and three-dimensional quantum confinements and related optical responses. The strain anisotropy is of importance in determining the electronic states of the quantum structures and the surrounding strained barrier. The strain-induced effects, such as change of band-gap and splitting of heavy-light hole states, were studied experimentally and theoretically. Optical anisotropy of these quantum structures is also discussed.

Original languageBritish English
Pages (from-to)307-315
Number of pages9
JournalApplied Physics A: Materials Science and Processing
Issue number2
StatePublished - Aug 2009


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