Laser projection-patterned etching of (100) GaAs by gaseous HCl and CH₃Cl

Physics

• Flux Density 100%
• Optics 50%
• Laser Pulse 50%
• Desorption 50%
• Fluence 50%
• Gas Pressure 50%
• Pulse Repetition Rate 50%
• Excimer Laser 50%

Engineering

• Gallium Arsenide 100%
• Etch Rate 60%
• Laser Energy Density 40%
• Etching Process 40%
• Atomic Layer 20%
• Molecular Layer 20%
• Local Laser 20%
• Laser Surface 20%
• Smallest Feature 20%
• Excimer Laser 20%
• Pulse Repetition Rate 20%
• Spatial Resolution 20%
• Gas Pressure 20%
• Base Pressure 20%

Material Science

• Gallium Arsenide 100%
• Surface (Surface Science) 100%
• Energy Density 40%
• Desorption 20%
• Laser Pulse 20%
• Thermochemical Reaction 20%